IRF9953TR Allicdata Electronics
Allicdata Part #:

IRF9953TR-ND

Manufacturer Part#:

IRF9953TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 30V 2.3A 8-SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 2.3A 2W Surfac...
DataSheet: IRF9953TR datasheetIRF9953TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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IRF9953TR is a single fet power array device manufactured by InternationalRectifier. It is a widely used device and is known for its various application fields and working principles. It is widely used for switching power in a wide range of applications such as motor control, frequency control, voltage regulation, and other power supply systems.

The IRF9953TR features an internally regulated gate voltage that makes it a suitable choice for high performance logic circuits. The device has a high breakdown voltage of -55V, making it suitable for use at high voltages. Additionally, the device has a low on-resistance, which enables it to operate at high currents and handle a large voltage swing.

The IRF9953TR is a dual N-Channel MOSFET Array. It is composed of two independent N-Channel mosfets connected in parallel configuration. The device contains two high-power N-Channel FETs affixed on the same die with separate source, gate, and drain terminals. The gate circuit is factory pre-wired and configured for high frequency operational stability and low gate capacitance. The device also has an integrated protection circuit to protect against false triggering due to EMI. Additionally, the device is designed for high temperature operation.

The operation of the IRF9953TR is as follows: when the source voltage is greater than the gate voltage, the FET will open and begin to carry current. The device is intended to be driven with 3 to 5 volts, depending on the specific requirements of the application. For example, when a 3.3V signal is applied to the gate terminal, the FET will open, allowing current to flow through it, and the device will remain closed until the voltage is less than 3 volts. Conversely, when a higher voltage such as 5 volts is applied, the FET will stay open until the voltage is decreased to 5 volts or lower.

The IRF9953TR is used in a variety of applications such as power supply systems, frequency control, voltage regulation, motor control, switching power and other high-speed switching applications. It is also used in low frequency applications such as lighting, power supply sequencing, pulse width modulators, and DC-DC converters.

Due to the high power handling capabilities and integrated protection features, the IRF9953TR is an ideal choice for a variety of high power and high frequency applications. The device has a high switching speed, low gate charge, and a low on-resistance, making it ideal for applications where high speed and low power dissipation are required.

In conclusion, the IRF9953TR is a reliable and powerful single fet power array device used in a variety of applications such as motor control, frequency control, voltage regulation, switching power, and other power supply systems. The device features an internally regulated gate voltage, a high breakdown voltage, a low on-resistance, and an integrated protection circuit for added protection. The device is suitable for use in high power and high frequency applications.

The specific data is subject to PDF, and the above content is for reference

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