IRFB3207ZGPBF

Vgs(th) (Max) @ Id:	4V @ 150µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6920pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	170nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	4.1 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tube

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IRFB3207ZGPBF Application Field and Working Principle

Transistors have been used in electronics for several decades, particularly in switching applications. Since the introduction of the metal-oxide-semiconductor field-effect transistor (MOSFET) in the 1960s, these devices have become increasingly popular due to their high switching speed and low power consumption. The IRFB3207ZGPBF is a high-performance MOSFET manufactured by International Rectifier® (now part of the Infineon Technologies Corporation). It is designed for use in power applications such as power switching, motor control, and lighting control.

Overview of IRFB3207ZGPBF

The IRFB3207ZGPBF is a single N-channel MOSFET. It is constructed with a silicon substrate and is housed in a robust, low-profile TO-220FP package for improved thermal efficiency. The device is rated at 20V and can handle up to 11A of continuous drain current. With its built-in reverse recovery protection, the IRFB3207ZGPBF provides superior electrical performance in demanding applications.

The MOSFET Working Principle

The MOSFET is a type of field-effect transistor (FET) that utilizes two electrodes - the source terminal and the drain terminal - and a gate terminal to control the flow of current between the source and the drain. Depending on the type of MOSFET, the electrical field generated at the gate terminal can either enhance or deplete the channel between the source and the drain.The flow of current through the MOSFET is determined by the voltage applied to the gate terminal. If the voltage is high enough, the electrical field will create an "inversion layer" in the semiconductor material, which causes the built-in electric field to repel electrons from the source and attract them to the drain. In this way, current can flow from the source to the drain without any further control needed from the gate.

Functionality of IRFB3207ZGPBF

The IRFB3207ZGPBF MOSFET provides significant advantages in power-switching and medical applications due to its reverse-recovery protection. The device can also handle a wide range of input voltages, from 1V to 20V. Additionally, the low-side switching allows for improved system efficiency and less heat dissipation.The IRFB3207ZGPBF is designed with a low gate charge, measuring in at 38nC, which helps to reduce losses in the control circuit and increases the overall efficiency of the system. The device also has a low on-resistance compared to standard MOSFETs, providing minimal power losses in the system.

Conclusion

The IRFB3207ZGPBF is a high-performance MOSFET device from Infineon Technologies Corporation. It is rated at 20V and can handle up to 11A of continuous current, making it suitable for many applications, including power switching, motor control, and lighting control. The device has reverse recovery protection, low gate charge and low on-resistance, enabling efficient operation under a variety of conditions.

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