IRFB41N15DPBF Allicdata Electronics
Allicdata Part #:

IRFB41N15DPBF-ND

Manufacturer Part#:

IRFB41N15DPBF

Price: $ 1.86
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 41A TO-220AB
More Detail: N-Channel 150V 41A (Tc) 200W (Tc) Through Hole TO-...
DataSheet: IRFB41N15DPBF datasheetIRFB41N15DPBF Datasheet/PDF
Quantity: 141
1 +: $ 1.68210
10 +: $ 1.52145
100 +: $ 1.22258
500 +: $ 0.95091
1000 +: $ 0.78790
Stock 141Can Ship Immediately
$ 1.86
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Introduction

IRFB41N15DPBF is an enhancement mode N Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is typically used for switching and amplifier applications. It has superior performance due to low on-state resistance and fast switching times. The IRFB41N15DPBF is well suited for a variety of applications in audio, motor control, and other power management systems.

Application Fields

The IRFB41N15DPBF can be used in a wide range of applications, including:

  • Audio systems: Output stages, power stages and high power amplifiers
  • High voltage circuits: Motor control, inverters, and dc-dc converters
  • Higher power switching circuits: Automotive and industrial power control
  • Vacuum systems: High voltage rectifiers and switches
  • Computer systems: Switching power supplies

Working Principle

The IRFB41N15DPBF works by using a gate voltage to modulate the flow of current through the device. When the gate voltage is above a certain threshold, the device is said to be in the “on” state and the current through the device is regulated by the resistance in the drain-source channel. By varying the gate voltage, the amount of current passing through the device can be controlled. When the gate voltage is below the threshold, the device is said to be in the “off” state and current flow through the device is blocked.

Features

The IRFB41N15DPBF has the following features:

  • Integrated fast switching dual N-channel MOSFETs
  • High efficiency power conversion
  • Low on-state resistance
  • Low gate charge
  • High output current
  • High speed switching
  • Low voltage operation

Conclusion

The IRFB41N15DPBF is a versatile device that can be used for a variety of applications. It features low resistance, high output current, and excellent switching performance. It is ideal for use in audio systems, motor control, and other power management systems.

The specific data is subject to PDF, and the above content is for reference

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