
Allicdata Part #: | IRFB41N15DPBF-ND |
Manufacturer Part#: |
IRFB41N15DPBF |
Price: | $ 1.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 41A TO-220AB |
More Detail: | N-Channel 150V 41A (Tc) 200W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 141 |
1 +: | $ 1.68210 |
10 +: | $ 1.52145 |
100 +: | $ 1.22258 |
500 +: | $ 0.95091 |
1000 +: | $ 0.78790 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2520pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 41A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Introduction
IRFB41N15DPBF is an enhancement mode N Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is typically used for switching and amplifier applications. It has superior performance due to low on-state resistance and fast switching times. The IRFB41N15DPBF is well suited for a variety of applications in audio, motor control, and other power management systems.
Application Fields
The IRFB41N15DPBF can be used in a wide range of applications, including:
- Audio systems: Output stages, power stages and high power amplifiers
- High voltage circuits: Motor control, inverters, and dc-dc converters
- Higher power switching circuits: Automotive and industrial power control
- Vacuum systems: High voltage rectifiers and switches
- Computer systems: Switching power supplies
Working Principle
The IRFB41N15DPBF works by using a gate voltage to modulate the flow of current through the device. When the gate voltage is above a certain threshold, the device is said to be in the “on” state and the current through the device is regulated by the resistance in the drain-source channel. By varying the gate voltage, the amount of current passing through the device can be controlled. When the gate voltage is below the threshold, the device is said to be in the “off” state and current flow through the device is blocked.
Features
The IRFB41N15DPBF has the following features:
- Integrated fast switching dual N-channel MOSFETs
- High efficiency power conversion
- Low on-state resistance
- Low gate charge
- High output current
- High speed switching
- Low voltage operation
Conclusion
The IRFB41N15DPBF is a versatile device that can be used for a variety of applications. It features low resistance, high output current, and excellent switching performance. It is ideal for use in audio systems, motor control, and other power management systems.
The specific data is subject to PDF, and the above content is for reference
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