IRFBC40LCPBF Allicdata Electronics
Allicdata Part #:

IRFBC40LCPBF-ND

Manufacturer Part#:

IRFBC40LCPBF

Price: $ 3.52
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 6.2A TO-220AB
More Detail: N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO...
DataSheet: IRFBC40LCPBF datasheetIRFBC40LCPBF Datasheet/PDF
Quantity: 43
1 +: $ 3.20040
10 +: $ 2.86020
100 +: $ 2.34518
500 +: $ 1.89902
1000 +: $ 1.60158
Stock 43Can Ship Immediately
$ 3.52
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFBC40LCPBF is a single N-channel, high-voltage MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of transistor is valued for its high speed switching capabilities, enabling reliable circuit design, as well as a high energy carrying capacity.

Application Field

The IRFBC40LCPBF is a type of transistor most commonly used in High Voltage AC/DC power conversion and high power switching applications, such as motor control and DC-DC converters. The typical application fields of this type of MOSFET are automotive, communication, computer/office automation and industrial electronics.

General Overview

This type of MOSFET transistors have a low-resistance channel, which allows them to switch high-currents and high-voltage surges. It also has built-in overcurrent and thermal protection, which ensures a longer service life and better performance than other transistors.

The single N-channel MOSFETs are available in various packages and sizes, with some as small as 0.7mm x 0.6mm. This makes them ideal for applications requiring limited space and high performance. They also offer low energy dissipation and high-speed switching capabilities.

Working Principle

The IRFBC40LCPBF works in the same way as any N-channel MOSFET. It has a source terminal, a drain terminal and a gate terminal. When the voltage drop between the gate terminal and the source terminal is between 0 and 5V, the MOSFET is in ‘cutoff mode’. This means that the current between the source and drain terminals is zero. When the voltage between the gate and source terminals is greater than 5 volts, the transistor is in ‘saturation mode’, allowing current to flow freely between the source and drain terminals.

This basic mechanism is what enables the single N-channel MOSFET to switch high currents and high-voltage surges with low energy dissipation. The MOSFET is also very reliable, with built-in overcurrent and thermal protection, making it well-suited for use in high power switching applications.

Conclusion

The IRFBC40LCPBF is a single N-channel, high-voltage MOSFET transistor. It is most commonly used in High Voltage AC/DC power conversion and high power switching applications. It is valued for its low energy dissipation and high-speed switching capabilities, making it ideal for applications requiring limited space and high performance.

The IRFBC40LCPBF works by having a source terminal, a drain terminal and a gate terminal. When the voltage between the gate and source terminals is between 0 and 5V, the MOSFET is in ‘cutoff mode’, and when it is greater than 5V, the transistor is in ‘saturation mode’, allowing current to flow between the source and drain terminals.

The specific data is subject to PDF, and the above content is for reference

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