Allicdata Part #: | IRFB3207ZPBF-ND |
Manufacturer Part#: |
IRFB3207ZPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 120A TO-220AB |
More Detail: | N-Channel 75V 120A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | IRFB3207ZPBF Datasheet/PDF |
Quantity: | 5000 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6920pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFB3207ZPBF is a high-performance, high-temperature, single N-channel MOSFET designed for both power and linear applications. It is an ideal choice for automotive and industrial applications, such as switch mode power supplies, solid-state relays, power amplifiers, DC-DC converters and motor control applications. It has a low gate charge and low on-resistance for high efficiency and low heat losses.
IRFB3207ZPBF Application Field
The IRFB3207ZPBF is specifically designed to handle high current and high-temperature operation in automotive and industrial applications. It is suitable for switching mode power supply circuits and other medium power linear and digital applications, such as audio amplifiers, voltage regulators, isolated DC-DC converters and motor control circuits. The device can also be used in lighting and monitor applications that require high switching speed and low thermal resistance.
IRFB3207ZPBF Working Principle
The IRFB3207ZPBF is an N-Channel MOSFET with a common-source configuration. It has an integrated drain-source diode for protection and circuit discharge. The gate-source voltage is used to turn the MOSFET switching on and off. The device is designed to reduce on-resistance and gate chards to facilitate high-efficiency operation with low heat dissipation. When the voltage applied to the gate is lowered, it induces a conductive channel between the drain and source and the current flows from the source to the drain. This process of turning the device on is known as “pinch-off”. When the gate voltage is increased, the channel is blocked and the device is off, which is known as “depletion”.
The IRFB3207ZPBF is equipped with ESD protection and is capable of withstanding up to 2KV HBM (Human Body Model) ESD protection. The device also offers very low leakage current at temperatures lower than 20°C, which makes it an excellent choice for power applications. The MOSFET also provides improved thermal performance and lower junction-to-case thermal resistance.
Conclusion
The IRFB3207ZPBF is an ideal choice of MOSFET for automotive and industrial applications due to its low gate charge, on-resistance and low thermal resistance. It is designed for high current and high-temperature operation and offers excellent protection against ESD. It is suitable for power, linear and digital applications, such as audio amplifiers, voltage regulators, and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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