IRFBE20

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The IRFBE20 Power MOSFET is a Common Source N-Channel enhancement mode power field-effect transistor (FET). It is designed for power switching and is capable of handling up to 20A and 30V, and features very fast switching rates. A power MOSFET is a transistor that can switch high voltages and currents. It has an insulated gate terminal (called the gate) and two electrodes (called the drain and source). By varying the voltage on the gate terminal the power MOSFET can be used as an amplifier to control the current flowing through it. In contrast to a Bipolar Junction Transistor (BJT) which is a current controlled device, a power MOSFET is a voltage controlled device. A power MOSFET is less affected by temperature variations and is therefore well suited for power control applications. The IRFBE20 is a type of MOSFET specifically designed for switching power. Commonly called the "MT-21" series, it is designed for applications requiring high power handling (30V and 20A). It features very fast switching speeds which makes it well suited for power conversion applications. It is also heavily used in motor control, solenoid control and other applications requiring fast switching. As a common source device, it is used as an electronic switch to control current and voltage.

The IRFBE20 is an N-Channel enhancement type power MOSFET which means that it can be used to control voltages from 0V to its rated limits. With a low gate threshold voltage of 3.2V and a threshold voltage range of 2V-4V, the IRFBE20 can handle high voltages and currents. It also has a low on-resistance of 2.2 ohms which ensures low power dissipation and low voltage drop when carrying large currents. The device supports PWM modulation of current hence it is suitable for switching mode applications.

The IRFBE20 is an enhancement mode power MOSFET, meaning that it requires a positive voltage applied to the gate to enable the current flow between source and drain. When the positive voltage is applied, the device is said to be "enhanced" and it will start to conduct current. The IRFBE20 can be used in either the "ON" state or the "OFF" state depending on the gate voltage applied. The device will remain in the "OFF" state until the gate voltage is increased to the "threshold voltage" of 3.2V, at which time it will transition to the "ON" state and switch on. It can be used for controlling current flow in a switched mode power supply or for controlling the speed of a motor by switching on and off in a sequence. The IRFBE20 is an efficient device due to its low on-resistance which reduces power losses.

In summary, the IRFBE20 is a power MOSFET designed for applications requiring high power handling, fast switching speed and efficient energy transfer. It is an N-channel FET, meaning it requires a positive voltage on the gate to enable current flow between the source and drain. With a low gate threshold voltage of 3.2V and a low on-resistance of 2.2 ohms, the IRFBE20 is ideal for power conversion applications and motor speed control. It is suitable for use in both the "ON" and "OFF" states depending on the gate voltage applied and is particularly effective for switching mode power supplies.

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