| Allicdata Part #: | IRFB4110GPBF-ND |
| Manufacturer Part#: |
IRFB4110GPBF |
| Price: | $ 3.12 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 120A TO220AB |
| More Detail: | N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO... |
| DataSheet: | IRFB4110GPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 3.12000 |
| 10 +: | $ 3.02640 |
| 100 +: | $ 2.96400 |
| 1000 +: | $ 2.90160 |
| 10000 +: | $ 2.80800 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 370W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 9620pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IRFB4110GPBF is a high current, low gate-threshold, N-Channel Power MOSFET (metal-oxide-semiconductor field-effect transistor). MOSFETs are capable of very high switching speeds for both analog and digital signals, and can be used in a wide range of applications ranging from power conversion and regulation to signal amplification. The IRFB4110GPBF is designed specifically for high efficiencies in power applications with high current requirements.
The IRFB4110GPBF features a low gate-threshold voltage of 1.8V and a current capability of 100A. It is also capable of switching PWM (pulse-width modulation) signals at up to 100kHz with dissipation capacities of up to 200W. Additionally, the device has a low capacitance of 3.5pF along with a low on-state resistance of 0.03Ω, making it ideal for switching applications. The device also features a low thermal resistance for improved heat dissipation.
The IRFB4110GPBF does not require a heatsink in most applications as it has a low Thermal Resistance Junction-to-Case (Rθjc) of 1.7°C/W. This ensures that the device can dissipate heat efficiently while operating.
The working principle of the IRFB4110GPBF is similar to that of other MOSFETs. It is a voltage-controlled device, which means that its drain current is controlled by the voltage applied to its gate. The device works on the principle of a “field effect”, which is an electric field generated in the region of the device between the gate and the source.
When a voltage is applied to the gate of the IRFB4110GPBF, an electric field is created in the drain-source region of the device. This electric field attracts electrons from the source to the drain, thus allowing the current to flow between drain and source. The amount of current flowing is determined by the size of the electric field and is directly proportional to the voltage applied to the gate.
The IRFB4110GPBF is suitable for a wide range of applications, including power converters and inverters, uninterruptible power supplies, DC-DC converters, high-efficiency switching power supplies, motor controllers, automotive applications, and other high-current devices. It can also be used in high-speed switching applications such as clock drivers, logic circuitry, and high-speed logic gates.
The IRFB4110GPBF is a reliable and efficient device that is suitable for a wide range of applications. Its low gate-threshold voltage, high current capability, and low thermal resistance make it an ideal choice for many power applications. Additionally, its ability to switch PWM signals at up to 100kHz makes it suitable for high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IRFB4410ZPBF | Infineon Tec... | -- | 15000 | MOSFET N-CH 100V 97A TO-2... |
| IRFBE20PBF | Vishay Silic... | -- | 387 | MOSFET N-CH 800V 1.8A TO-... |
| IRFB4212PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 18A TO-2... |
| IRFBG20PBF | Vishay Silic... | -- | 2234 | MOSFET N-CH 1000V 1.4A TO... |
| IRFBA1404 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 206A SUPE... |
| IRFBC30LPBF | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 3.6A TO-... |
| IRFBF20STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 900V 1.7A D2P... |
| IRFB4410PBF | Infineon Tec... | -- | 1484 | MOSFET N-CH 100V 96A TO-2... |
| IRFB7546PBF | Infineon Tec... | -- | 25990 | MOSFET N-CH 60V 75A TO-22... |
| IRFBF30STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 900V 3.6A D2P... |
| IRFB4115GPBF | Infineon Tec... | -- | 1164 | MOSFET N-CH 150V 104A TO2... |
| IRFBF30L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 900V 3.6A TO-... |
| IRFB16N60LPBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 600V 16A TO-2... |
| IRFBF20PBF | Vishay Silic... | -- | 647 | MOSFET N-CH 900V 1.7A TO-... |
| IRFB9N65APBF | Vishay Silic... | 2.28 $ | 219 | MOSFET N-CH 650V 8.5A TO-... |
| IRFB4020PBF | Infineon Tec... | -- | 12875 | MOSFET N-CH 200V 18A TO-2... |
| IRFB18N50KPBF | Vishay Silic... | -- | 965 | MOSFET N-CH 500V 17A TO-2... |
| IRFBC30STRLPBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 600V 3.6A D2P... |
| IRFB3207ZGPBF | Infineon Tec... | -- | 20 | MOSFET N-CH 75V 120A TO-2... |
| IRFB9N60APBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 600V 9.2A TO-... |
| IRFBE20STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 800V 1.8A D2P... |
| IRFBA90N20DPBF | Infineon Tec... | 5.22 $ | 502 | MOSFET N-CH 200V 98A SUPE... |
| IRFBC20SPBF | Vishay Silic... | -- | 429 | MOSFET N-CH 600V 2.2A D2P... |
| IRFBC40AL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 6.2A TO-... |
| IRFBC40ASTRL | Vishay Silic... | -- | 1000 | MOSFET N-CH 600V 6.2A D2P... |
| IRFBE30STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 800V 4.1A D2P... |
| IRFB3077PBF | Infineon Tec... | -- | 336 | MOSFET N-CH 75V 120A TO-2... |
| IRFBE30S | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 800V 4.1A D2P... |
| IRFBA1404P | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 206A SUPE... |
| IRFB16N50K | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 500V 17A TO-2... |
| IRFB3006GPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 195A TO22... |
| IRFBC40LCSTRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 6.2A D2P... |
| IRFBC20STRLPBF | Vishay Silic... | 1.18 $ | 1000 | MOSFET N-CH 600V 2.2A D2P... |
| IRFBC20STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 2.2A D2P... |
| IRFB4310GPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 130A TO-... |
| IRFB4110PBF | Infineon Tec... | -- | 12000 | MOSFET N-CH 100V 120A TO-... |
| IRFBC30 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 3.6A TO-... |
| IRFB9N60A | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 9.2A TO-... |
| IRFBC40 | Vishay Silic... | -- | 1000 | MOSFET N-CH 600V 6.2A TO-... |
| IRFB33N15D | Infineon Tec... | -- | 1000 | MOSFET N-CH 150V 33A TO-2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
IRFB4110GPBF Datasheet/PDF