IRFB4110GPBF Allicdata Electronics
Allicdata Part #:

IRFB4110GPBF-ND

Manufacturer Part#:

IRFB4110GPBF

Price: $ 3.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 120A TO220AB
More Detail: N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO...
DataSheet: IRFB4110GPBF datasheetIRFB4110GPBF Datasheet/PDF
Quantity: 1000
1 +: $ 3.12000
10 +: $ 3.02640
100 +: $ 2.96400
1000 +: $ 2.90160
10000 +: $ 2.80800
Stock 1000Can Ship Immediately
$ 3.12
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 370W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The IRFB4110GPBF is a high current, low gate-threshold, N-Channel Power MOSFET (metal-oxide-semiconductor field-effect transistor). MOSFETs are capable of very high switching speeds for both analog and digital signals, and can be used in a wide range of applications ranging from power conversion and regulation to signal amplification. The IRFB4110GPBF is designed specifically for high efficiencies in power applications with high current requirements.

The IRFB4110GPBF features a low gate-threshold voltage of 1.8V and a current capability of 100A. It is also capable of switching PWM (pulse-width modulation) signals at up to 100kHz with dissipation capacities of up to 200W. Additionally, the device has a low capacitance of 3.5pF along with a low on-state resistance of 0.03Ω, making it ideal for switching applications. The device also features a low thermal resistance for improved heat dissipation.

The IRFB4110GPBF does not require a heatsink in most applications as it has a low Thermal Resistance Junction-to-Case (Rθjc) of 1.7°C/W. This ensures that the device can dissipate heat efficiently while operating.

The working principle of the IRFB4110GPBF is similar to that of other MOSFETs. It is a voltage-controlled device, which means that its drain current is controlled by the voltage applied to its gate. The device works on the principle of a “field effect”, which is an electric field generated in the region of the device between the gate and the source.

When a voltage is applied to the gate of the IRFB4110GPBF, an electric field is created in the drain-source region of the device. This electric field attracts electrons from the source to the drain, thus allowing the current to flow between drain and source. The amount of current flowing is determined by the size of the electric field and is directly proportional to the voltage applied to the gate.

The IRFB4110GPBF is suitable for a wide range of applications, including power converters and inverters, uninterruptible power supplies, DC-DC converters, high-efficiency switching power supplies, motor controllers, automotive applications, and other high-current devices. It can also be used in high-speed switching applications such as clock drivers, logic circuitry, and high-speed logic gates.

The IRFB4110GPBF is a reliable and efficient device that is suitable for a wide range of applications. Its low gate-threshold voltage, high current capability, and low thermal resistance make it an ideal choice for many power applications. Additionally, its ability to switch PWM signals at up to 100kHz makes it suitable for high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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