| Allicdata Part #: | IRFB7446PBF-ND |
| Manufacturer Part#: |
IRFB7446PBF |
| Price: | $ 1.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 40V 120A TO220 |
| More Detail: | N-Channel 40V 120A (Tc) 99W (Tc) Through Hole TO-2... |
| DataSheet: | IRFB7446PBF Datasheet/PDF |
| Quantity: | 4000 |
| 1 +: | $ 1.09000 |
| 10 +: | $ 1.05730 |
| 100 +: | $ 1.03550 |
| 1000 +: | $ 1.01370 |
| 10000 +: | $ 0.98100 |
| Vgs(th) (Max) @ Id: | 3.9V @ 100µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 99W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3183pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 93nC @ 10V |
| Series: | HEXFET®, StrongIRFET™ |
| Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 70A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IRFB7446PBF is a type of transistors-field effect transistors (FETs) and metal oxide semiconductor field effect transistors (MOSFETs). In particular, it is a single component FET/MOSFET transistor.
The IRFB7446PBF, designed by International Rectifier, is an N-Channel enhancement mode MOSFET with an insulated-gate. It has the ability to handle up to 55 volts (Vds) and a continuous drain current of 30 amps (Id). The IRFB7446PBF also has a breakdown voltage of 100 volts and a total gate to source voltage (Vgs) of 20 volts.
The IRFB7446PBF has a wide range of applications, from general purpose power control to motor speed control and signal switches. It is an excellent choice for many automotive, telecommunication, and industrial applications. The package size of the IRFB7446PBF is D²Pak i55, making it easy to install in smaller areas.
The IRFB7446PBF demonstrates a number of capabilities when it comes to signal switching, including low noise and high switching speeds. It also provides a moderate level of protection against overvoltage and transients. As such, it can be effectively used as a switch in applications involving signal switching, power control, and motor speed control.
The working principle of the IRFB7446PBF is based on the concept of insulated-gate FETs and MOSFETs. Basically, a gate insulating layer, such as SiO2, is added to a conventional FET or MOSFET, which removes the traditional gate-source capacitance. This eliminates the need for a gate driver, allowing for lower operating power and higher switching speeds. The insulated-gate FET/MOSFET can be used in situations where voltage is needed, either as a switch or as an amplifier.
At the heart of the IRFB7446PBF is the insulated-gate FET/MOSFET. The gate insulator prevents current from flowing between the gate and the source, allowing the transistor to be used in situations where the appropriate gate voltage can be provided. When the appropriate gate voltage is applied, current flows from the drain to the source, allowing it to be used as a switch. When combined with an appropriate gate driver, the IRFB7446PBF can be used in situations where an amplifier is required.
In conclusion, the IRFB7446PBF is an N-Channel enhancement mode FET/MOSFET transistor designed by International Rectifier. Its insulated-gate design allows for effective signal switching, power control and motor speed control. It has a wide range of applications, including general purpose power control and motor speed control. Its gate insulating layer allows it to be used in situations where voltage is needed. The IRFB7446PBF also has a low noise and a high switching speeds, making it an excellent choice for many automotive, telecommunication, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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IRFB7446PBF Datasheet/PDF