IRFB4510PBF

Vgs(th) (Max) @ Id:	4V @ 100µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	140W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3180pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	87nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	13.5 mOhm @ 37A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	62A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction to IRFB4510PBF Transistor

The IRFB4510PBF transistor is a type of Field Effect Transistor (FET) manufactured by International Rectifier Corporation. This standard voltage-controlled FET is primarily used in a wide range of power management applications. It is a four-terminal, split-gate complementary MOSFET with an integrated anti-parallel diode. It is classified as a single discrete transistor device and is available in the TO-220 PowerPAK package.

Features and Benefits of the IRFB4510PBF

The IRFB4510PBF Transistor features several benefits and improved performance characteristics over traditional FETs. Its split-gate construction reduces power dissipation dramatically, and its internal circuitry can detect when the gate voltage is close to the source voltage so the FET is shut-off automatically when not needed. The resulting lower power consumption and improved performance make the IRFB4510PBF an attractive alternative for many applications. Its small, surface-mountable design also helps reduce design costs and allows for greater flexibility in board layout. The device has an enhanced Avalanche voltage rating, making it suitable for use in high-voltage applications. Additionally, its thermal resistance rating is 0.9°C/W, making the device capable of dissipating large amounts of power without overheating. Finally, its low on-state resistance helps to reduce losses during conduction.

Application Field and Working Principle of IRFB4510PBF

The IRFB4510PBF, with its low on-state resistance, is ideal for use in power management applications. It can be used in a variety of high-voltage applications such as switching converters, DC-DC converters, and inverters, as well as more conventional switching designs. The device can also be used as a low-loss switch in motor drive circuits, braking circuits, and freewheel systems. Additionally, its thermal resistance rating makes the device suitable for use in high-power applications where heat dissipation is an issue. The IRFB4510PBF is an N-Channel Enhancement-Mode MOSFET and its control functions work based on the principle of bandgap voltage reference. This means that it is designed to switch on or off depending on the voltage applied to its Gate terminal, which controls the flow of current between Drain and Source terminals. A positive voltage applied to the Gate results in the FET being opened and the current allowed to flow between the Drain and the Source. When the Gate voltage is negative, the FET is considered closed and no current flow is detected between the Drain and Source.

Conclusion

The IRFB4510PBF MOSFET is a single, voltage-controlled FET with numerous features and benefits that make it an ideal choice for power management applications. Its split-gate construction reduces power dissipation, while its internal circuitry helps to detect when the gate voltage is close to the source voltage and shuts off the FET automatically when it is not needed. Additionally, its improved thermal resistance rating, enhanced Avalanche voltage rating, and low on-state resistance make the device capable of dissipating large amounts of power without overheating and with minimal losses during conduction.

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