| Allicdata Part #: | IRFBF20LPBF-ND |
| Manufacturer Part#: |
IRFBF20LPBF |
| Price: | $ 1.98 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 900V 1.7A TO-262 |
| More Detail: | N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Throu... |
| DataSheet: | IRFBF20LPBF Datasheet/PDF |
| Quantity: | 3042 |
| 1 +: | $ 1.79550 |
| 10 +: | $ 1.62099 |
| 100 +: | $ 1.30246 |
| 500 +: | $ 1.01303 |
| 1000 +: | $ 0.83937 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 54W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 8 Ohm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tc) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRFBF20LPBF is a type of single high power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is widely used in a variety of device applications, such as power amplifiers, audio amplifiers, and power supplies. The IRFBF20LPBF is available in two different packages, a TO-247 Plus ACTIVE package and an SMPD package. Both packages offer the same figure of merit (Figure 8.0), with Rds(on) of 0.32 Ω, Coss of 240 pF, and Pd of 170 W.
When it comes to MOSFETs, their applications in the electronics industry are multifaceted. The main purpose of a MOSFET is to control the flow of current from one part of the circuit to another, allowing for the building of various circuits. The IRFBF20LPBF is no exception, as it can be used to build a wide range of different circuits, from drivers to DC-DC converters to audio amplifiers. It is particularly popular as a power amplifier, as its high Rds(on) and low Pd make it ideal for delivering large amounts of power with minimum losses.
The working principle of the IRFBF20LPBF is the same as that of any other MOSFET. At its simplest, a MOSFET is a three-terminal device with a control gate, a source, and a drain. When the control gate is at a higher potential than the source, the MOSFET is turned “on”, allowing current to flow between the two terminals. When the control gate is at a lower potential than the source, the MOSFET is turned “off”, blocking the current from flowing. This is known as the voltage transfer characteristic of the MOSFET, and it can be used to control the flow of current between two points in a circuit.
The IRFBF20LPBF operates using a similar principle, however its on-resistance is much lower than that of traditional MOSFETs. This low on-resistance combined with its high-power handling capacity make it an ideal choice for applications where wide dynamic range and high efficiency are required. The IRFBF20LPBF can also be used in a variety of other applications, including the construction of linear voltage regulators and the switching of inductive and capacitive loads. Its high-frequency performance is also quite impressive, with a maximum frequency of 4.5GHz.
In conclusion, the IRFBF20LPBF is a highly efficient and powerful MOSFET that can be used in all sorts of applications, from audio amplifiers to power supplies. Its low on-resistance combined with its high power handling capacity make it an ideal choice for applications where wide dynamic range and high efficiency are needed, and its impressive high-frequency performance make it suitable for a variety of other uses as well.
The specific data is subject to PDF, and the above content is for reference
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IRFBF20LPBF Datasheet/PDF