IRFBF20LPBF Allicdata Electronics
Allicdata Part #:

IRFBF20LPBF-ND

Manufacturer Part#:

IRFBF20LPBF

Price: $ 1.98
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 900V 1.7A TO-262
More Detail: N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Throu...
DataSheet: IRFBF20LPBF datasheetIRFBF20LPBF Datasheet/PDF
Quantity: 3042
1 +: $ 1.79550
10 +: $ 1.62099
100 +: $ 1.30246
500 +: $ 1.01303
1000 +: $ 0.83937
Stock 3042Can Ship Immediately
$ 1.98
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFBF20LPBF is a type of single high power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is widely used in a variety of device applications, such as power amplifiers, audio amplifiers, and power supplies. The IRFBF20LPBF is available in two different packages, a TO-247 Plus ACTIVE package and an SMPD package. Both packages offer the same figure of merit (Figure 8.0), with Rds(on) of 0.32 Ω, Coss of 240 pF, and Pd of 170 W.

When it comes to MOSFETs, their applications in the electronics industry are multifaceted. The main purpose of a MOSFET is to control the flow of current from one part of the circuit to another, allowing for the building of various circuits. The IRFBF20LPBF is no exception, as it can be used to build a wide range of different circuits, from drivers to DC-DC converters to audio amplifiers. It is particularly popular as a power amplifier, as its high Rds(on) and low Pd make it ideal for delivering large amounts of power with minimum losses.

The working principle of the IRFBF20LPBF is the same as that of any other MOSFET. At its simplest, a MOSFET is a three-terminal device with a control gate, a source, and a drain. When the control gate is at a higher potential than the source, the MOSFET is turned “on”, allowing current to flow between the two terminals. When the control gate is at a lower potential than the source, the MOSFET is turned “off”, blocking the current from flowing. This is known as the voltage transfer characteristic of the MOSFET, and it can be used to control the flow of current between two points in a circuit.

The IRFBF20LPBF operates using a similar principle, however its on-resistance is much lower than that of traditional MOSFETs. This low on-resistance combined with its high-power handling capacity make it an ideal choice for applications where wide dynamic range and high efficiency are required. The IRFBF20LPBF can also be used in a variety of other applications, including the construction of linear voltage regulators and the switching of inductive and capacitive loads. Its high-frequency performance is also quite impressive, with a maximum frequency of 4.5GHz.

In conclusion, the IRFBF20LPBF is a highly efficient and powerful MOSFET that can be used in all sorts of applications, from audio amplifiers to power supplies. Its low on-resistance combined with its high power handling capacity make it an ideal choice for applications where wide dynamic range and high efficiency are needed, and its impressive high-frequency performance make it suitable for a variety of other uses as well.

The specific data is subject to PDF, and the above content is for reference

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