IRFBC20 Allicdata Electronics
Allicdata Part #:

IRFBC20-ND

Manufacturer Part#:

IRFBC20

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 2.2A TO-220AB
More Detail: N-Channel 600V 2.2A (Tc) 50W (Tc) Through Hole TO-...
DataSheet: IRFBC20 datasheetIRFBC20 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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In the age of modern high-tech technology, a wide range of integrated circuits are available for powering many electronics like computer processors, digital cameras, radio receivers, and much more. Amongst the many integrated circuits, IRFBC20 is an important one as it comprises of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) those offer several advantages in terms of reliable operation, robust design, and high efficiency. The device has several applications in fields such as power management, motor control, audio amplifiers, and bridge rectification.

A MOSFET is an electronic device that enables current to flow through a semiconductor device without any significant losses when the required voltage is applied to the gate. The major components of a MOSFET are the gate, drain, and source. The gate forms a barrier between the drain and the source, which results in current flowing through the device in only one direction. The size of the gate determines the amount of current that can be conducted through the MOSFET and is dependent on the size of the gate and the goal. The MOSFETs are available in different sizes, with different gate and drain capacitances.

The IRFBC20 MOSFET is an advanced device that is used in power management and motor control applications. It is specifically designed to provide high operating efficiency, robust designs, and reliable operation at all times. The device features a low threshold voltage, low gate charge, and adjustable drain and source capacitance. Additionally, it has a fast switching time and can reach a maximum current of 15 amperes.

The IRFBC20 MOSFET is typically used in applications such as power management and motor control. In power management, it is used to control the flow of current in circuits with high demand and reliable operation. This ensures that systems are not overworked and power resources are used efficiently. In motor control, the device is used to control the speed and direction of the motor. It is able to control the flow of current and the speed of the motor with precision.

The working principle of IRFBC20 MOSFET is fairly simple. When a voltage is applied to the gate, the gate creates a barrier between the drain and the source and allows current to flow in only one direction. The size of the gate determines the amount of current that can be conducted and is determined by the voltage applied to the gate. The drain and source capacitance of the device can also be adjusted according to the desired current level.

The IRFBC20 MOSFET provides several advantages over other devices in terms of reliability, robustness, and efficiency. The device is highly reliable and offers a fast switching time, low gate charge, and adjustable drain and source capacitance. Additionally, its low threshold voltage makes it suitable for applications that require precise control of current levels. Furthermore, the device is capable of carrying out high current without any significant losses and can reach a maximum current of 15 amperes.

In conclusion, the IRFBC20 MOSFET is a reliable, robust, and highly efficient device that can be used in many applications. It can be used to control current levels in circuits with high demand and reliable operation. Additionally, its adjustable drain and source capacitance makes it suitable for applications such as motor control, audio amplifiers, and bridge rectification.

The specific data is subject to PDF, and the above content is for reference

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