Allicdata Part #: | IRFBA1405PPBF-ND |
Manufacturer Part#: |
IRFBA1405PPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 174A SUPER-220 |
More Detail: | N-Channel 55V 174A (Tc) 330W (Tc) Through Hole SUP... |
DataSheet: | IRFBA1405PPBF Datasheet/PDF |
Quantity: | 58 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | Super-220™-3 (Straight Leads) |
Supplier Device Package: | SUPER-220™ (TO-273AA) |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Power Dissipation (Max): | 330W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5480pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 101A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 174A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFBA1405PPBF transistors are used in a wide range of applications, from power supplies and switching amplifiers to digital logic and RF signals. The transistor is a member of the family of Field Effect Transistors (FETs), specifically a single type of MOSFET (metal–oxide–semiconductor field effect transistor). This type of transistor is heavily used due to the very high switching speeds it is capable of, as well as its relatively low voltage drop. By controlling a voltage, rather than the current as with other types of transistors, the switching speed is much higher, making it perfect for high-speed circuits. The device also operates at much lower power draw than standard bipolar transistors.
The working principle of a MOSFET is quite similar to other FETs, with three terminals referred to as the gate, source, and drain. The gate is the voltage control input, of which any voltage applied to it can control the current that flows between the source and the drain. When the gate is at zero volts, the device is turned off and no current flows between the source and drain. By changing the voltage applied to the gate, the current can be changed accordingly, allowing for effective voltage control of current flow. For example, by increasing the gate voltage, current flow increases as well, allowing for a more effective switch. The source is the voltage source, from which the current is drawn, and the drain is the voltage sink, to which the current is flowing. In order for the transistor to operate, the drain must be at a lower potential in relation to the source.
The IRFBA1405PPBF is a unique device due to the ultra-low voltage drop between the source and the drain. The low voltage drop allows for much higher switching speeds due to the minimal energy loss. This makes the transistor ideal for circuitry that needs to run quickly, such as digital logic boards. The transistor is also capable of controlling high voltages, making it perfect for applications such as motor controls and power supplies where high voltages need to be switched quickly. The maximum voltage the transistor is capable of controlling is up to 200 Volts, with a maximum current of 7 Amps. Furthermore, the gate looks to be quite delicate, meaning it must be protected from electrical spikes that are typically seen in motor switching applications.
Overall, the IRFBA1405PPBF transistor is an effective device for switching and controlling high voltages quickly, due to its low voltage drop, high current capability, and high switching speeds. It is most commonly used in digital logic boards, motor controls and power supplies, as well as other high-speed device applications. The device is quite robust overall and has also been found to be quite efficient, since it requires much lower power draw than standard bipolar transistors. While its gate may be delicate, it is still suitable for a wide range of applications, particularly those that require fast switching and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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