IRFB3256PBF

Vgs(th) (Max) @ Id:	4V @ 150µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6600pF @ 48V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	195nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	3.4 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRFB3256PBF Application Field and Working PrincipleIRFB3256PBF is an advanced-level power field effect transistor (FET) which is one of a variety of single-gate FETs. It is a very powerful and popular device used in many applications today. Here, we will discuss its application field and working principle.In terms of its application field, the IRFB3256PBF is mainly used for power switching and/or as a switching regulator in high-current/high-voltage applications. It is also popular in switching circuits, especially in automotive and home automation applications. Moreover, the IRFB3256PBF is also used in radio-frequency (RF) transmission lines and other industrial electronic systems.The IRFB3256PBF has two components: the drain and the source. It utilizes a reverse-conducting (RC) FET structure in which the drain voltage is low and the source voltage is high. The drain and source voltages are connected in reverse order to provide a bidirectional current flow and ensure proper operation of the device.As for its working principle, the IRFB3256PBF works by utilizing the gate-channel effect, which basically refers to the way two oppositely charged electrodes affect the channel of the power transistor. When the drain voltage is low, the gate-channel effect creates a voltage drop across the channel of the FET. This effect changes the current flow and the source voltage of the power transistor, thus allowing the FET to act like a switch that can be turned on or off by controlling the gate voltage.Aside from the gate-channel effect, the IRFB3256PBF also utilizes the doping process. In a FET, the doping process refers to the ability of the device to have different types of impurities mixed into its structure. By changing the type and concentration of impurities, the device can change its characteristics and thus enable it to operate more efficiently and effectively.In addition to its gate-channel effect and doping process, the IRFB3256PBF also utilizes an Interesting Factor (IF) for enhanced operation. The Interesting Factor is a parameter used to measure the conduit of the FET’s switching power. The IF is defined by how the FET can manage its switching power and its voltage and current characteristics. With its enhanced Interesting Factor, the IRFB3256PBF can deliver excellent power switching and linear performance.In conclusion, the IRFB3256PBF is an advanced-level power field effect transistor that is suitable for many applications. It works by utilizing the gate-channel effect, doping process, and Interesting Factor to provide efficient and reliable power switching and linear performance.

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