![IRFB3307PBF Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRFB3307PBF-ND |
Manufacturer Part#: |
IRFB3307PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 130A TO-220AB |
More Detail: | N-Channel 75V 130A (Tc) 200W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 3286 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5150pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFB3307PBF is a type of N-channel MOSFET or N-channel MOS field-effect transistor. It is used in a wide range of applications, from high-performance power conversion and switching to low-power analog signal amplification. In this article, we will discuss the application field and working principle of the IRFB3307PBF.
The IRFB3307PBF is designed for applications where large currents and high voltages are involved. It is a hefty device with a 330A continuous drain current rating and a voltage rating of 100V. Due to its large current capability, the IRFB3307PBF is often used in automotive, consumer electronics, and power supply circuitry. In a typical application, it is used as a switching device in DC-DC converters, motor controllers, and appliance controls.
The IRFB3307PBF belongs to a family of N-channel MOSFETs. A MOSFET is a voltage-controlled device, meaning that it can be used to control the resistance of a current path between the source and the drain. In addition to its ability to control large currents and voltages, the MOSFET is often chosen as an analog switch due to its low output capacitance, low input bias current, and high switching speed.
The working principle of the IRFB3307PBF is similar to that of other MOSFETs. In its typical linear operation, the drain current of the transistor is controlled by the gate voltage. A positive voltage on the gate increases the electron current between the source and the drain, thus increasing the drain current. As the gate voltage is decreased, the drain current is decreased as well.
The IRFB3307PBF also allows for a saturation region of operation. In this mode, the drain current is increased exponentially as the gate voltage is increased. This makes it useful for applications where increased current is required. However, the drain current must stay within the allowed continuous current rating, or else the device can be damaged.
The IRFB3307PBF also has an inductive switch mode. In this mode, the switching is accomplished by driving a high current through an inductor connected to the gate and drain. This reduces the standby power loss, since the drain current is kept low at all times.
In conclusion, the IRFB3307PBF is an N-channel MOSFET used in applications where high currents and high voltages are involved. It can be used as a linear switch, or it can be driven into a saturation or inductive switch mode as needed. The IRFB3307PBF is a versatile and reliable device that is used in a wide range of circuits.
The specific data is subject to PDF, and the above content is for reference
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