IRFB3407ZPBF

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The IRFB3407ZPBF is a N-Channel power MOSFET transistor with a drain current of 100A and a drive voltage of 10V. It is commonly used for various applications such as power supplies and power control circuits. In this article, we will look at the application field of the IRFB3407ZPBF as well as its working principle.

Application Field

The IRFB3407ZPBF is mainly used in high-power applications. It can be used to switch high voltages and currents in switching power supplies, motor controllers, and DC-DC converters. It is also used in audio and video systems, LCD inverters, and high-current automotive circuits. Additionally, it is also used in battery chargers, laptop power supplies, and other consumer electronics.

Working Principle

The IRFB3407ZPBF is a depletion-mode MOSFET, which means that it is normally off and needs a negative gate-source voltage in order to turn on. The amount of current that flows from the drain to the source is controlled by the gate voltage. When the voltage between the gate and the source is zero, the MOSFET is off, and no current flows from the drain to the source. As the voltage between the gate and the source increases, the MOSFET turns on and current starts flowing from the drain to the source.

When the drain-source voltage is increased, the current that flows from the drain to the source also increases. This is called the drain-source resistance, or “rDS(on)”. The lower the rDS(on), the less power is required to turn on the MOSFET, and the higher the efficiency. The IRFB3407ZPBF has a low rDS(on) of 0.0047 ohms, which makes it suitable for high-power applications.

The IRFB3407ZPBF can also handle high voltage spikes, up to a maximum of 600V. This makes it suitable for applications where the voltages may be higher than the rated voltage. Additionally, the IRFB3407ZPBF also has a high avalanche energy rating, which makes it suitable for applications where the voltages may spike higher than the rated voltage.

Finally, the IRFB3407ZPBF is resistant to ESD, which makes it suitable for use in automotive and other automotive-related applications. The low gate charge of the MOSFET also means that it requires less power to turn it on and off, which makes it more efficient.

In conclusion, the IRFB3407ZPBF is a N-channel power MOSFET transistor with a drain current of 100A and a drive voltage of 10V. It is suitable for high-power applications such as those found in power supplies and power control circuits, and its low rDS(on) and high avalanche energy rating make it suitable for applications where the voltages may be higher than the rated voltage. Additionally, it is resistant to ESD and has a low gate charge, making it efficient for use in automotive applications.

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