IRFB4229PBF

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The IRFB4229PBF is a N channel Power MOSFET that is part of the family of Power MOSFETs from Infineon. This device is housed in a 7.3 x 11.25 mm plastic package and combines low RDS(on) with low gate charge and integrated body diode. It is designed to reduce gate charge, power dissipation and improve gate drive characteristics while providing improved efficiency, scalability and higher performance.

The IRFB4229PBF is an MOSFET designed for use in power applications. It utilizes a planar-diffused process with a N channel enhancement type. The device also offers a drain source breakdown voltage of 20 V with an on-resistance of 10 mR. It can pass a maximum current of 27.7 A at 25 °C and is capable of operating up to 175 °C temperature.

The working principle of IRFB4229PBF is based on MOSFET structure and operation. MOSFET is a four-terminal device with a gate, a drain, and a source. The gate terminal is used to control the conductivity between the drain and the source. The junction between the drain and the source is known as the channel. When the gate voltage is low, the channel is off, and the device acts as an open switch (high resistance) between the drain and the source. When the gate voltage is high, the channel is on, and the device acts as a closed switch (low resistance) between the drain and the source.

The IRFB4229PBF is used in applications such as lighting dimmers, motor speed controllers, electrical power controllers, and welding machines. It can also be used in voltage regulators, electronic VCRs, and bandwidth converters. The device is ideal for high frequency switching applications and is suitable for use in harsh operating conditions due to its low gate charge, low RDS(on), low input capacitance, and wide operating temperature range.

The IRFB4229PBF also has a wide on-resistance range, making it well-suited for a variety of current handling requirements. Its low gate charge ensures fast switching speed and its integrated body diode reduces switching losses, resulting in improved efficiency and better performance. The device also features low RDS(on) for efficient power dissipation and its improved body diode helps to reduce unwanted electrical overstress.

Overall, the IRFB4229PBF is a great choice for power applications that require a combination of low on-resistance, fast switching speed, and improved gate drive characteristics. Its low gate charge and integrated body diode help to reduce power dissipation and switching losses, making it highly efficient and reliable. The device also offers a wide operating temperature range and low input capacitance, making it suitable for applications in harsh environments.

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