IRFBE30STRLPBF

The IRFBE30STRLPBF is an advanced level single N-channel Enhancement-mode MOSFET developed by International Rectifier (IR) Co., Ltd., which is used in various application fields concerning space-saving and energy-saving. This part has a planar structure and specific Trench original Field- Stop technology, and is especially suitable for high-frequency power conversion, synchronous rectification and other applications.

IRFBE30STRLPBF is a single N-channel enhancement-mode MOSFET with a maximum drain current of 30A. Its maximum drain to source voltage is 25V and its gate to source voltage is -12V and maximum. The part features a high resistance ratio between its drain and source, with a maximum drain to source voltage of 25V, a threshold voltage of -2.5V, and a maximum on-state resistance of 11.8 milliohms. The low gate charge of the device, the temperature range of -55° C to 150° C, and its maximum operating frequency of 5MHz make it an ideal choice for power controlling applications.

The working principle of IRFBE30STRLPBF is quite simple and easy to understand. Basically, it is a voltage-controlled device, which is a voltage driven current source and drains current from the source. The input to the device is a gate control voltage which controls the device and the amount of drain current by modulating the drain to source voltage. When the gate voltage increases, the drain current increases up to a maximum, while when the gate voltage decreases, the drain current decreases. The device, therefore, works as a voltage driven current source.

The IRFBE30STRLPBF is suitable for small, portable and cost-effective power conversion applications, battery chargers, DC/DC converters, LED lighting, LED drivers, switching dc-dc converters, and lighting ballasts. It is also suitable for applications involving high-voltage Spike protection and EMI suppression, switching power supply, power modules, active/semi-active PFC and other applications. The device offers low on-state resistance, low gate charge, high frequency operation and high-temperature operation.

In conclusion, the IRFBE30STRLPBF is an advanced level single N-channel Enhancement-mode MOSFET the offers a range of features for various application fields. It features a high resistance between its drain and source and a low gate charge excellent for high-frequency power conversion applications, low on-state resistance, and excellent high-temperature operation, with a temperature range of -55°C to 150°C. The device is suitable for a range of applications and can be used in any space-saving and energy-saving needs.