IRFC2604B

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IRFC2604B is a vertical double-diffused metal/oxide/semiconductor field effect transistor (VMOSFET) designed for use in high-power industrial and professional applications. IRFC2604B has high drain-source breakdown voltage, good avalanche characteristics and high operating temperature range. With these features, the device is suitable for use in applications such as high-end switching, rectification, motor control and power management.

The IRFC2604B is designed on a double diffused junction and utilizes conductive substrate (DCS) technology, an advanced vertical design that minimizes the physical area of the transistor and reduces on-resistance. The device contains a silicon substrate and an internal PN junction for temperature compensation. The device also contains several layers of N+ and P+ junction regions to achieve a higher breakdown voltage. The DCS technology provides better power dissipation and power handling than standard MOSFETs.

The working principle of the IRFC2604B is similar to other MOSFETs, with the gate controlling the drain-source current. The gate of the device is driven by a gate-source voltage (VGS) which, when applied, causes an inversion layer to form between the source and the drain. This inversion layer acts as an insulating layer, allowing the current to flow through the device when the VGS is above the threshold voltage of the MOSFET. The VGS also controls the drain-source current as it changes based on the DCS of the device and the load voltage.

The IRFC2604B is available in a variety of package sizes, with a max channel temperature of 175˚C. This allows the device to be used in high power applications that require a higher channel temperature than standard MOSFETs can handle. The device also features a low input and gate capacitance, allowing for fast switching times in applications with high-frequency switching. Additionally, the device offers a high dv/dT, allowing for higher switching speeds without the need for additional gate drive components.

IRFC2604B is well-suited for applications such as high-end switching, rectification, motor control, and power management. It is a cost-effective, high-temperature MOSFET that provides excellent performance in any application. With its high breakdown voltage and fast switching speed, the device is ideal for any high power or high frequency application.

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