IRFC4768ED

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IRFC4768ED is an Enhancement Mode Field Effect Transistor (FET). It is primarily used in applications requiring large power switching at low voltage and lower frequencies as it offers an extremely low on-resistance (rg).

IRFC4768ED is a high performance, high density, single-package, single-gate N-channel MOSFET transistor. It operates at a voltage range of 4.5V to 20V. It is suitable for a wide range of switching applications, particularly those that require fast switching speeds at a wide range of frequencies. This FET has a low on-resistance ranging from 0.18 ohms to 0.45 ohms, depending on the operating conditions. It is also suitable for linear applications up to 25A current and acceptable for RF applications such as pulse width modulation (PWM).

IRFC4768ED can be used in several different types of applications that require low frequency, large power switching. It works with a variety of logic-level signals and can be used in both DC and AC switches. Additionally, the FET is suitable for point of load (PoL) applications, making it ideal for power converters. Additionally, it is suitable for motor control applications such as snubbers, solenoids, and valve controllers because it can safely handle large transients. It is also suitable for driving inductive loads such as motors and LEDs.

IRFC4768ED works on a principle of electrostatic field-effect mobility which is the generation of electrical force from the movement of charges across a conductor. This type of FET works like a normal Field Effect Transistors (FETs), but instead of using the traditional channel-shaped semiconductor material it is composed of a multiplex of semiconductor materials coupled in series. This arrangement creates a “channel” of conduction between the source and gate, and the gate and drain. The voltage between the gate and source is the direct control-element in this FET.

When a positive potential is applied to the gate, the transistor is turned on and current begins flowing from source to drain. When the gate to source voltage is negative, the transistors turns off and the current flow from source to drain is significantly reduced. This characteristic means that the FET can be used in switching applications without any additional components.

Queensland University of Technology (QUT) is at the forefront of research on FETs, especially their use in wireless applications. The QUT research team recently designed an IRFC4768ED-based radio microelectromechanical system (MEMS) switch array in which an array of FETs was integrated into a radio MEMS device. The radio MEMS device works on a principle of remotely-controlled reconfigurable radio transceivers. With this design, they have successfully created a large-scale reconfigurable switch array with an ultra small footprint.

IRFC4768ED is an excellent choice for applications requiring fast switching speed, large power handling and low on-resistance or low voltage requirements. It is suitable for both linear and switching applications and it is also suitable for motor control applications such as snubbers and valve controllers. Additionally, it is suitable for the operation of high current loads such as motors and LEDs, making it one of the most versatile FETs available in the market.

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