IRFC4332ED

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFC4332ED is a semiconductor device featuring enhancement-mode field effect transistors (FETs) manufactured by Infineon Technologies. The device enables low on-resistance and high-speed switching, making it suitable for a wide range of applications. This article outlines the application field and working principle of the IRFC4332ED.

Application Field

The IRFC4332ED is an enhanced-mode MOSFET (metal oxide semiconductor field effect transistor) designed for medium-voltage applications. It is available in a single-row 6-pin PowerPAK SO-8 package. Ideal uses include load switching and level shifting in synchronous rectifier or Buck converter circuit. The device has been proven to have superior on-resistance and low gate threshold voltage for improved system efficiency. The device provides protection against over-temperature and over-current events and is specified for operating temperature range from -55°C to +150°C.

The IRFC4332ED can be widely applied in automotive, consumer and other industrial systems. Its low on-resistance of up to 400mΩ at 3.3V as well as high-speed switch time can reduce system losses and protect ICs from damaging over-current events. Its high temperature operating range makes it suitable for a variety of automotive and consumer applications, while its low gate threshold voltage ensures better system stability even during high temperature operation.

Working Principle

MOSFETs are three-terminal devices that consist of a source, gate and drain terminals. The IRFC4332ED can be viewed as two interconnected insulated-gate FETs, also known as a dual MOSFET. It has an N-channel drain-source region, and a P-channel front-gate region.

The N-channel MOSFET consists of an N-type substrate, with an N-type source and an N-type drain formed in a vertical direction. A gate electrode is formed over the N-type substrate and an insulated gate layer is provided for isolation between the gate and substrate. The P-channel MOSFET has a P-type substrate, with a P-type source and a P-type drain formed in a vertical direction. A gate electrode is formed over the P-type substrate and an insulated gate layer is provided for isolation between the gate and substrate.

In operation, a gate voltage is applied to the gate electrode of the P-channel MOSFET, which increases the current conduction between the source and the drain. This will cause the MOSFET to enter an enhancement mode, where the resistance between the source and drain is lowered. Simultaneously, a gate voltage is applied to the gate electrode of the N-channel MOSFET, which then reduces the current conduction between the source and the drain. This results in the device entering a depletion mode, effectively increasing the resistance between the source and drain.

The drain-source of the IRFC4332ED is connected to the output to be handled. When a lower voltage is applied at the gate terminal, the current conduction between the source and drain is reduced, and when a higher voltage is applied the conduction is increased. This action is used for switching loads and for level-shifting in power circuit applications.

Conclusion

The IRFC4332ED is a dual MOSFET suitable for medium-voltage applications. It is used for load-switching and level-shifting in synchronous rectifier or Buck converter circuits. The device has superior low on-resistance that improves system efficiency, a high temperature operating range, and a low gate-threshold voltage for maintaining system stability.

The specific data is subject to PDF, and the above content is for reference