IRFC8721ED

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFC8721ED is a type of single power MOSFET which has been designed to operate in a wide range of applications. It is a good choice for applications that require high efficiency and low losses, such as in DC-DC converters, automotive applications, power supplies and many other circuit designs. With its low ON resistance, the IRFC8721ED can provide higher operating efficiency and lower switching loss at higher current levels, making it ideal for applications that require high levels of performance.

The IRFC8721ED is typically used in the source-follower configuration. This configuration is ideal for applications where a high impedance (low capacitance) device is required. The source-follower configuration positions the MOSFET between the power source and the load and allows the MOSFET to provide electrical isolation, while also providing a low output impedance and fast switching speed. Additionally, because of its low gate-to-source capacitance, the IRFC8721ED can be used in high-frequency applications with very low levels of noise and distortion.

The IRFC8721ED is composed of a vertical structure MOSFET which includes an abundant layer of silicon dioxide insulation. This insulation helps to improve the threshold voltage of the MOSFET and prevents electrical leakage. In addition, the vertical structure helps ensure that the MOSFET operates at much lower voltage levels than those of a typical MOSFET. This allows the IRFC8721ED to operate in a wide range of conditions and reduce the chances of exceeding maximum junction temperatures.

The MOSFET’s gate is terminated to the drain via an insulated gate oxide. This oxide prevents any electrical leakage between the gate and the drain. To ensure maximum performance and to protect against static discharge, the gate oxide of the IRFC8721ED should be kept above 5V. Additionally, the gate oxide of the IRFC8721ED can handle up to 10V of gate-to-source voltage, making it ideal for power supplies with high voltage levels.

The MOSFET’s operation depends on the voltage difference between the gate and its source. A negative gate voltage activates the MOSFET and causes it to conduct current over its channel, while a positive voltage deactivates the device. This switching process is used in a wide range of applications, from power supplies to PWM circuits. Additionally, the MOSFET can be used in multiple device configurations for even more applications.

The IRFC8721ED can be used in both common source and common drain configurations. In the common source configuration, the source terminal is connected to the ground and the channel between the source and the drain is open. This configuration is typically used when the MOSFET needs to supply current to a load. In the common drain configuration, the drain is connected to the power supply and the channel is closed. This configuration is typically used when acting as a switch that turns a device on or off.

In addition to its wide range of applications, the IRFC8721ED can provide high levels of efficiency and performance. Its low ON resistance and high impedance structure allow for a wide range of current levels, making it ideal for applications that require current levels of up to 20 amps. Additionally, due to its low gate-to-source capacitance and low threshold voltage, the IRFC8721ED can be used in high-frequency circuits and provide noise-free performance.

In conclusion, the IRFC8721ED is an ideal choice for a wide range of applications. It can provide high levels of efficiency and performance, while also providing noise-free performance in high-frequency circuits. With its low ON resistance and high impedance structure, the IRFC8721ED can operate in current levels of up to 20 amps, making it not only suitable for power supplies, but also a wide range of switching applications. Overall, the IRFC8721ED is a great choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference