IRFC4010EB

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The IRF4010EB is an enhancement–mode Power MOSFET that is used in high–voltage power supply applications, ranging from 500V to 1050V for the drain–to–source voltage. The gate–to–source voltage to withstand is ±25V. These power MOSFETs have excellent RDS(on) vs. temperature characteristics, minimal leakage and low gate charge. These FETs are widely used in a variety of DC to DC converters, motor control applications, lighting applications, AC motor drives, and power supplies.

Specifications

• It has a drain–to–source voltage of 500V to 1050V.
• Its drain current is 27A.
• Its RDS(on) at a 10V gate–to–source voltage is 55 milliohms.
• It has a fast switching speed.
• Its gate–source voltage withstand is ±25V.

Features

• It is an enhancement-mode power MOSFET.
• It has an excellent RDS(on) vs. temperature characteristics.
• It has low gate charge.
• It has minimal drain–source and drain–gate leakage.
• It has a very good D.C current gain.
• It has high stability under multiple temperature and pressure conditions.

Applications

• DC to DC converters.
• Motor control applications.
• Lighting applications.
• AC motor drives.
• Power supplies.

Working Principle

A single MOSFET device consists of three terminals: source, drain and gate. A single MOSFET works just like a switch, which separates the supply from the load. When no voltage is applied to the gate terminal, the device operates as an open switch and no current flows through the drain terminal. When voltage is applied to the gate terminal, the device closes and current can flow through the drain terminal.

Conclusion

The IRF4010EB is an enhancement–mode Power MOSFET power component that is widely used in a variety of applications. It has a very low on-resistance and is widely used in high–voltage power supply applications, ranging from 500V to 1050V. It has a fast switching speed and minimal leakage. It is an ideal component for power applications that require fast switching, low leakage, and low on–resistance.

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