| Allicdata Part #: | IRFC4115EB-ND |
| Manufacturer Part#: |
IRFC4115EB |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 150V DIE ON WAFER |
| More Detail: | |
| DataSheet: | IRFC4115EB Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | * |
| Part Status: | Obsolete |
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IRFC4115EB is an Enhancement-mode high impedance FET with a very low ON resistance and high breakdown voltage. It is a distinctively built Mosfet with its high switching speed allowing flawless operations.
IRFC4115EB Application Field
The IRFC4115EB is primarily used in automotive applications, power supplies, and power conversion systems. It features very easy bi-directional switching and can be used in both synchronous rectifiers and boost converters. Additionally, it is typically used as power transistors in loads demanding high frequency switching speeds and high current levels. This versatility in application makes this product a go-to choice for many design engineers.
IRFC4115EB Working Principle
A FET with an enhancement-mode high impedance has a very low ON resistance. A high breakdown voltage allows the product to be operated safely in the application at higher voltages. To understand how the IRFC4115EB works, it is essential to first understand what an Enhancement-mode FET is. FETs, also known as Field Effect Transistors, are flexible active devices used for various purposes including switching, impedance matching, linear amplification, signal processing, and interfacing analog & digital signals. FETs are generally composed of three terminals, Drain, Gate and Source, which are connected to a semiconductor material.
When the gate-source voltage is greater than a certain voltage, the gate-source channel is formed and electrons flow through it. If the FET has an enhancement-mode high-impedance, the channel cannot be formed unless the gate-source voltage is greater than the minimum threshold voltage. The IRFC4115EB has this type of enhancement-mode high-impedance that makes it an optimal choice for high frequency switching.
The IRFC4115EB also has a very low on-resistance when the channel is formed. This low on-resistance means that the device has low ‘heat conduction loss,’ resulting in greater efficiency. This increases the speed of operation and reduces power consumption, which makes the device highly desirable.
Conclusion
The IRFC4115EB, a Enhancement-mode fet, is a popular choice for many applications such as automotive, power supplies, and power conversion systems due to its high switching speed, high current level and low on-resistance. Its use of an enhancement-mode high-impedance and low threshold voltage also allow the device to be operated in a safe, high voltage environment.
The specific data is subject to PDF, and the above content is for reference
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IRFC4115EB Datasheet/PDF