
Allicdata Part #: | IRFC4127ED-ND |
Manufacturer Part#: |
IRFC4127ED |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH WAFER |
More Detail: | |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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The IRFC4127ED is a type of field-effect transistor (FET) option, specifically a N-Channel enhancement-mode MOSFET, that can offer both high current-handling capability and low on-state resistance. As a versatile device, it is often employed in many areas.
The IRFC4127ED is primarily used for application purposes in many fields and industries, such as for audio power amplifiers, light emitting displays, automotive applications and general purpose switching. This is attributed to the MOSFET\'s ability to deliver high current flow and low resistance at an affordable price. In terms of audio amplification, the IRFC4127ED remains one of the most popular options in terms of its total harmonic distortion and noise immunity, while its low on-state resistance allows the device to be used without any additional protection or heat-sinking.
Furthermore, the device can also be used for speed-control systems, such as those seen in transportation or industrial settings. Its decent power rating makes it a good choice for low to medium speed applications, while its low on-state resistance ensures that power loss is kept to a minimum. Additionally, the durable nature of the device allows it to be used in harsher environments, such as high humidity and temperature applications.
In terms of its working principle, the IRFC4127ED operates in much the same way as any other MOSFET transistor. It consists of three terminals, including a gate, drain and source. The gate terminal is the control terminal to which a bias voltage is applied, allowing for the drain current to be adjusted. The gate voltage is then amplified by the FET, allowing for current to flow from the source to the drain. The higher the voltage being applied, the greater the current will flow.
The IRFC4127ED also benefits from an internal back-gate diode which helps to suppress the body diode conductance. This means that the device can support the fields of body bias, reducing the Leakage current and increasing the effective current without adversely affecting the switching performance. This additional feature makes the IRFC4127ED an even more attractive option for those seeking an affordable, yet effective FET option.
In conclusion, the IRFC4127ED is a device that offers an excellent balance of power, efficiency and reliability. Its versatility allows it to be used in various applications such as audio amplifiers, motor speed control and general purpose switching. Furthermore, its low on-state resistance and internal diode make it an even more attractive device for those seeking an affordable, yet effective field-effect transistor option.
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