Allicdata Part #: | IRFC4227EB-ND |
Manufacturer Part#: |
IRFC4227EB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH WAFER |
More Detail: | |
DataSheet: | IRFC4227EB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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The IRFC4227EB, a voltage controlled field effect transistor, is a specific model of MOSFET from the family of single gate field effect transistors (FETs). As with any type of MOSFET, these types of FETs are designed to control the flow of electrons and current betweensource and drain when an appropriate voltage is applied to the gate. The IRFC4227EB is most often used in source and drain designs on various electronics applications; typically in motor control, as well as in switched mode power supplies (SMPS) applications. Herein, this article describes both the field of application and the working principle of the IRFC4227EB.
The IRFC4227EB is generally considered ideal MOSFETs for source-current designs in motor control circuitry. This transistor features a number of features well suited to this purpose, such as its wide drain-source voltage rating of 600 volts. This allows the device to be used in circuits requiring higher voltages, such as in refrigerators and other appliances. Additionally, the device can handle currents of up to 130 amps when used in DC applications, meaning it is suitable for running high powered loads such as large motors. The high switching capability of the IRFC4227EB also makes it well suited for use in switching mode power supplies, as it can achieve fast switching times compared to other FETs.
Aside from its use in motor control and SMPS circuits, the IRFC4227EB can also be used in flyback power converters and transient suppression circuits. Flyback power converters are commonly used in switching power supplies, while energy-storage capacitors are typically required in transient suppression circuits. The excellent switching performance and high-current handling characteristics of the IRFC4227EB make it ideal for both of these types of applications.
To understand the workings of the IRFC4227EB, it is important to understand how FETs operate. As its name suggest, FETs are semiconductor based devices with three terminal connections. They work by selectively allowing only certain particles, usually electrons, to move from the source to the drain connection by controlling the voltage that is applied to the gate terminal. This voltagedependent conduction is due to the formation of a conducting channel between the source and drain terminals, created when the voltage applied to the gate is above a certain threshold.
The maximum current that can be conducted by the IRFC4227EB is determined by the maximum drain-source voltage, channel width, and channel length. When the voltage applied to the gate terminal exceeds the established threshold, an inversion layer forms between the source and drain. This inversion layer is composed of electron holes and creates a conducting channel between the source and drain. This channel creates an effective "short" between the source and drain, allowing current from the source to reach the drain. By controlling the voltage on the gate terminal, the resistance of the channel between the source and drain is varied and the current is regulated.
In conclusion, the IRFC4227EB is an excellent choice for applications such as motor control, switched mode power supplies, flyback converters, and transient suppression circuits. Its wide drain-source voltage rating, high current handling capability, and fast switching times make it well suited for these types of applications. Its operation is based on the principle of voltagedependent conduction and channel formation between the source and the drain, allowing electrons to be channeled to the drain when the gate voltage exceeds a certain threshold.
The specific data is subject to PDF, and the above content is for reference
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