IRFZ34E Allicdata Electronics
Allicdata Part #:

IRFZ34E-ND

Manufacturer Part#:

IRFZ34E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 28A TO-220AB
More Detail: N-Channel 60V 28A (Tc) 68W (Tc) Through Hole TO-22...
DataSheet: IRFZ34E datasheetIRFZ34E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFZ34E is an enhanced energy PBS-channel field effect power transistor which is available in the TO-220AC package. The IRFZ34E is an enhancement-mode mosfet which is designed for various applications such as switching and linear amplifier circuits. It is also suitable for many low voltage applications, such as voltage regulator modules, low voltage power solutions, automotive applications and so on.

The IRFZ34E is a self-protected metal oxide field effect transistor and it is primarily designed for use in power management systems. It has a breakdown voltage of 4V and a maximum on-state drain current of 18A. It also has a good power dissipation rating of 40W. It is rated for operation temperatures up to 150°C and a maximum junction temperature of 175°C.

The IRFZ34E has a large on-state drain current and is capable of regulating current with small input signals. This makes it ideal for power management applications. It has an extremely low gate to source capacitance and provides excellent switching performance. Furthermore, its drain to source dielectric breakdown voltage is up to 4V. The device also features an enhanced avalanche-energy capability.

The working principle of IRFZ34E is based on the P-Channel Metal Oxide Semiconductor Field-effect Transistor (MOSFET) technology. The MOSFETs are designed with a positive gate to provide fast switching performance and low threshold voltage. The device is composed of multiple layers, including a source, a drain, and a gate. The source and drain are made of the same semiconducting material, and the gate is made of a metal material. When the gate voltage is applied, the MOSFET turns on, allowing current to flow between the source and the drain. The gate voltage influences the flow of current between the source and the drain, so it can be used to regulate the current.

In addition, the IRFZ34E is ideal for various motor control applications like motor start/stop, speed control and braking, as it has an adjustable gate threshold voltage range. The device also has a good immunity to noise, thus providing a good heat dissipation and better efficiency. Furthermore, the device has an adjustable breaking capability which makes it capable of handling varying loads.

The IRFZ34E is a versatile and reliable component which is used in a variety of applications. It is designed to provide superior performance and can be used in a wide range of power management systems. It is ideal for low voltage and high voltage power management systems and it offers excellent switching performance and adjustable breaking capabilities. The device is also well-suited for applications such as motor start/stop, braking, and speed control. It is reliable and can handle a variety of load types.

The specific data is subject to PDF, and the above content is for reference

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