IRFZ44VZPBF Allicdata Electronics
Allicdata Part #:

IRFZ44VZPBF-ND

Manufacturer Part#:

IRFZ44VZPBF

Price: $ 1.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 57A TO-220AB
More Detail: N-Channel 60V 57A (Tc) 92W (Tc) Through Hole TO-22...
DataSheet: IRFZ44VZPBF datasheetIRFZ44VZPBF Datasheet/PDF
Quantity: 1681
1 +: $ 1.29780
10 +: $ 1.17180
100 +: $ 0.94141
500 +: $ 0.73220
1000 +: $ 0.60668
Stock 1681Can Ship Immediately
$ 1.43
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 92W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFZ44VZPBF is a type of transistor that falls under the Single category of FETs and MOSFETs. Transistors are devices made from an arrangement of two or more semiconductor materials that create a junction in which electric current or signals can pass through in either one or both directions. This type of transistor is the most common type of transistor and is used in a wide variety of electronic circuits and circuit components.

The IRFZ44VZPBF is built with a drain and a source, which are both connected to a conducting material. It is also composed of a gate, which is a layer that acts as a barrier between the source and the drain. The gate can be controlled either manually or electronically to allow currents or signals to pass through or be blocked from passing through. When the gate is opened, an electric field is created between the source and the drain, which allows for the current or signal to pass through. The gate can also be closed, causing an immediate stop in the flow of current or signals. One of the advantages of using this type of transistor is that it can be used in high-power applications because of its ability to switch rapidly and automatically without any manual input.

The IRFZ44VZPBF is a voltage controlled, metal-oxide semiconductor field-effect transistor (MOSFET), which is often used in power applications. It is designed to be able to handle large amounts of electrical current and has a drain-source breakdown voltage of between 55 and 60 volts. This transistor is particularly useful in applications where switching is needed quickly and at high voltages, such as in automotive electronics, LED lighting, and motor drive circuits. It is also often used in applications that require a low on-resistance, like in the switching of audio amplifiers.

The working principle of the IRFZ44VZPBF is quite simple and can be described as follows: An electric field is generated between the source and the gate when a specific voltage is applied, causing a flow of current or signals from the source to the drain. This field is modulated dynamically between the drain and the gate, allowing for either a slow or a rapid switching of the current or signals. When the gate is opened, the current or signals will flow at its maximum rate, while when the gate is closed, the current or signals will stop flowing altogether.

In conclusion, the IRFZ44VZPBF is a type of transistor used in a variety of electronics applications and circuits. It is particularly useful for power applications due to its ability to switch rapidly and automatically. Its working principle is based on the creation of an electric field between the source and the gate which, when opened by the application of a specific voltage, enables currents and signals to pass from the source to the drain.

The specific data is subject to PDF, and the above content is for reference

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