IRFZ46ZS

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The IRFZ46ZS is a MOSFET transistor manufactured by International Rectifier Corp. The transistor is designed for power management applications and is suitable for use in a variety of different high-power circuits including DC-DC converters and motor control. This article will discuss the application field and working principle of the IRFZ46ZS transistor.

The IRFZ46ZS MOSFET is a single-channel type that is capable of handling up to 50 A of continuous drain current and features an Avalanche energy of up to 177 mJ. It is typically operated at a drain-to-source voltage of up to 55 V and has an on-resistance of <10 mΩ. The package of the IRFZ46ZS consists of a plastic encapsulated TO-220AB PowerPAD which provides a low thermal resistance package. The transistor is suitable for use in extreme temperature conditions and can be operated in a -55°C to +150°C temperature range.

The main application areas where the IRFZ46ZS is used include computer peripheral power supplies, industrial control, UPS, notebook power adapters, and other mobile communications. The transistor is also suitable for use in devices such as automotive DC-DC converters, motor controllers, and general AC motor drives. The IRFZ46ZS has the advantage of being able to offer high efficiency and switching speeds compared to other transistors.

The working principle of the IRFZ46ZS is based on the principle of insulated gate/field effect transistor (IGFET). The transistor is composed of a pair of two doped layers, one layer is known as the source and the other is known as the drain. A gate voltage applied between the source and drain creates an electric field which in turn affects the conductivity of the channel between the two. The conductivity of the channel is thus modulated by the applied voltage and this allows a current to flow between the source and drain. Thus, the IRFZ46ZS acts as an electronic switch, allowing currents to be controlled as per the gate voltage.

In summary, the IRFZ46ZS MOSFET transistor is a single-channel type of transistor which is suitable for use in a variety of power management applications. It is capable of handling high drain currents and has an Avalanche energy of up to 177 mJ. The main application areas for the IRFZ46ZS include computer peripheral power supplies, industrial control, UPS systems and mobile communications. The working principle of the transistor is based on the insulated gate/field effect transistor (IGFET) where an applied voltage determines the conductivity of the channel and thus allowing a current to be between the source and drain.

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