IRFZ46ZSTRLPBF Allicdata Electronics
Allicdata Part #:

IRFZ46ZSTRLPBF-ND

Manufacturer Part#:

IRFZ46ZSTRLPBF

Price: $ 0.48
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 51A D2PAK
More Detail: N-Channel 55V 51A (Tc) 82W (Tc) Surface Mount D2PA...
DataSheet: IRFZ46ZSTRLPBF datasheetIRFZ46ZSTRLPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.48000
10 +: $ 0.46560
100 +: $ 0.45600
1000 +: $ 0.44640
10000 +: $ 0.43200
Stock 1000Can Ship Immediately
$ 0.48
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 82W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFZ46ZSTRLPBF is a type of Field-effect transistor(FET) which belongs to the group of single, metal-oxide-semiconductor FETs(MOSFETs). It is a voltage-controlled device, designed with an insulated gate that helps in controlling the flow of current. The IRFZ46ZSTRLPBF is a N-channel enhancement mode MOSFET which has a drain-source voltage rating of 60V and a drain current of 86A. The FET also has a fast switching speed, low on-resistance, and low gate charge.

Due to its features, the IRFZ46ZSTRLPBF is widely used in a wide variety of applications. Common applications include power switching and automotive electronics, such as in-vehicle communication, engine control, and audio systems. It can also be used in consumer electronics, such as desktop computers, laptops, televisions and home theater systems. Furthermore, these FETs can also be used in industrial applications such as LED lighting and power supplies.

The working principle behind the IRFZ46ZSTRLPBF MOSFET is based on their ability to control the flow of current through them by applying voltage to the gate. When some voltage is applied to the gate of the FET, a thin layer of insulator (oxide) between the gate and channel creates a channel of conducting electrons from source to drain. This, in turn, creates an electric field that controls the conductivity of the channel.

This electric field increases the conductivity of the channel and allows more current to pass through the FET. The amount of current that can pass through the FET depends on the amount of the voltage applied to the gate. When the voltage applied is zero, the channel is completely insulated, thus blocking any current from passing through.

The IRFZ46ZSTRLPBF is also characterized by its capability to be used as a switch. The FET is usually used at its cutoff/saturation regions. The cutoff region is when the FET is in its ‘off’ state and the source-drain current is not measurable. This is usually due to the lack of voltage applied to the gate. When the voltage applied is high enough, the FET enters its saturation region where it is in its ‘on’ state and the source-drain current becomes measurable.

In conclusion, the IRFZ46ZSTRLPBF is a type of MOSFET that is mostly used for power switching applications in automotive and consumer electronics. The FET works by controlling the flow of current through it by applying voltage to the gate. Furthermore, the FET’s cutoff/saturation regions allow it to be used as a switch.

The specific data is subject to PDF, and the above content is for reference

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