IRFZ46NSTRLPBF Allicdata Electronics

IRFZ46NSTRLPBF Discrete Semiconductor Products

Allicdata Part #:

IRFZ46NSTRLPBFTR-ND

Manufacturer Part#:

IRFZ46NSTRLPBF

Price: $ 0.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 53A D2PAK
More Detail: N-Channel 55V 53A (Tc) 3.8W (Ta), 107W (Tc) Surfac...
DataSheet: IRFZ46NSTRLPBF datasheetIRFZ46NSTRLPBF Datasheet/PDF
Quantity: 800
1 +: $ 0.58000
10 +: $ 0.56260
100 +: $ 0.55100
1000 +: $ 0.53940
10000 +: $ 0.52200
Stock 800Can Ship Immediately
$ 0.58
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1696pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFZ46NSTRLPBF is a type of single power MOSFET, integrating advanced process technology and features a Power MOSFET with the latest NMOS technology. As a single MOSFET, it has minimum on-resistance of 0.0045 ohms and continues until Case Temp exceeds 175 degrees Celsius. It has a high breakdown voltage of 43 volts and a maximum operating junction temperature of 175°C. In addition, its maximum power dissipation is 702 mW.

The IRFZ46NSTRLPBF is widely used in various applications including switching regulators, DC to DC converters, motor control, Class-D audio amplifiers, and other high-power analog circuits. It is widely used in a number of devices and its application in portable audio systems, for instance, allow for high-quality sound reproduction.

The IRFZ46NSTRLPBF also has excellent fast switching performance and can handle large capacitive loads despite its small size. It has a high frequency operation up to 50 kHz as well, allowing for fast switching for high powered applications. In addition, its self-protection features such as over-voltage and over-current protection, thermal shutdown, and under-voltage lockout, make it ideal for high power applications.

Working principle of the IRFZ46NSTRLPBF involves the use of metal oxide semiconductor field effect transistors (MOSFETs). A metal oxide semiconductor is an isolation device that can be used to regulate and control the flow of electricity. In the case of the IRFZ46NSTRLPBF, the metal-oxide semiconductor is composed of a thin layer of metal oxide material positioned between the source and the drain of the MOSFET. The metal oxide layer acts as an insulator, allowing the electric current to flow only when the voltage applied to the gate of the MOSFET exceeds the threshold voltage required to turn the MOSFET on. Once the voltage applied to the gate exceeds the threshold voltage, the electrons from the source side and drain side of the MOSFET can flow freely between the two sides. The instruction booklet for the power MOSFET provides more details about the working principle of the IRFZ46NSTRLPBF.

The IRFZ46NSTRLPBF is a powerful and versatile MOSFET that can be used in a wide variety of high power analog and digital applications. Its fast switching times, large capacitive load handling, and excellent protection features make it an ideal choice for applications requiring high power at high switching frequencies. Additionally, its low on-resistance characteristics, along with its high breakdown voltage, make it suitable for applications requiring very low power consumption.

The specific data is subject to PDF, and the above content is for reference

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