IRFZ44ZS Allicdata Electronics
Allicdata Part #:

IRFZ44ZS-ND

Manufacturer Part#:

IRFZ44ZS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 51A D2PAK
More Detail: N-Channel 55V 51A (Tc) 80W (Tc) Surface Mount D2PA...
DataSheet: IRFZ44ZS datasheetIRFZ44ZS Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 80W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFZ44ZS is an N-Channel Enhancement Mode Field Effect Transistor specifically designed for microelectronic circuit applications. The device is manufactured using very high-speed silicon-gate MOSFET technology and designed in such a way as to obtain extremely low on-state resistance while providing very high performance in all other aspects.

The IRFZ44ZS is an ideal choice for applications requiring low power, high-speed switching, and low-voltage operation. It is most commonly used in high-frequency radio transmitters, radio receivers, microwave equipment, automotive electronics, and other high-speed, low-power applications. This device is well suited for battery powered applications due to its low drain source voltage and it can handle up to 4.5V of drain source voltage.

The working principle of this MOSFET is quite simple. When a voltage is applied to the gate of the device, it creates an electric field that turns the MOSFET on. The source and drain terminals are then connected by a channel of electrons. When the gate voltage is increased further, the channel width increases, allowing for higher current. When the gate voltage is reduced, the channel width decreases, limiting the current flow.

The IRFZ44ZS device consists of a n-type metal-oxide-semiconductor field-effect transistor (MOSFET) integrated with a high-frequency radio frequency (RF) driver. Using this device, it is possible to control the output power of a high-frequency amplifier in the radio frequency (RF) band more accurately, while also lowering the power consumption, size and cost of the product. It is designed to operate as a common-source amplifier with a low-frequency channel to reduce cross-talk and distortion effects, and offers high reliability and robust performance.

The IRFZ44ZS is an extremely popular MOSFET and has numerous applications. It can be used to drive high power switching and rectifying circuits, PWM circuits, and Class-D audio amplifiers. It can also be used in power supplies, inverters, and other power control applications. Furthermore, this device is popularly used in battery applications, such as mobile phones, where it can provide efficient charging solutions.

Overall, the IRFZ44ZS is an ideal choice for a wide range of applications, due to its low on-state resistance, low power consumption, low cost, and excellent performance. Its simple operation and robust design make it an ideal solution for a variety of applications, and it is an important component of any electronic system.

The specific data is subject to PDF, and the above content is for reference

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