IRFZ44PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFZ44PBF is a high-powered n-channel enhancement-mode Field-Effect Transistor (FET). It is an extremely popular power MOSFET that is designed for use with 12 V to 55 V DC power sources and is capable of delivering up to 42 A of continuous current. The transistor can be used in a variety of applications from switching motor direction to amplifying signals or supplying power to various circuits. In this article, we will discuss the applications, working principles and characteristics of the IRFZ44PBF.

Applications

The IRFZ44PBF is commonly used in electronic applications as a switch or as an amplifier. It can be used to power load circuits such as motors and provide a low-impedance path for carrying current. It is often used in automotive applications to switch motor direction, control the power to an LED array, or to amplify a corresponding signal. The FET is also well-suited for general- DC switching applications, power supplies, and power amplifiers. In addition, it can also be used for AC switching and for logic applications.

Working Principle

The IRFZ44PBF is a p-channel enhancement-mode FET, which means that it is activated when a positive voltage is applied across the gate and drain terminals, causing the source-gate junction to be forward-biased. When the gate junction is forward-biased, a thin depletion region forms between the source and the gate, allowing a current to flow from the source to the gate. This current is called the gate current, which changes the voltage at the gate terminal and creates an inversion layer in the semiconductor material. The inversion layer forms a channel through which current can be allowed to flow from the drain to the source. This channel is called the channel and is responsible for allowing the current to flow in both directions between the drain and the source.

Characteristics

The IRFZ44PBF transistor has a low on-resistance of about 0.00653 Ω, making it suitable for use in high current applications. Its maximum power dissipation rating is 25 W, and the maximum operating temperature is 175̊C. The transistor\'s gate threshold voltage is 4.75 V and its maximum drain-source voltage is 55 V. It can operate in either DC or AC applications, and its maximum drain-source current is 42 A.

In summary, the IRFZ44PBF is a versatile and powerful n-channel enhancement-mode FET that has a wide range of applications in electronics and automotive circuits. It is highly efficient at conducting current and has an extremely low on-resistance, making it ideal for high power applications. Furthermore, its gate-source threshold voltage is low, and its maximum drain-source voltage and current ratings are high.

The specific data is subject to PDF, and the above content is for reference