IRFZ48VSTRLPBF Allicdata Electronics
Allicdata Part #:

IRFZ48VSTRLPBF-ND

Manufacturer Part#:

IRFZ48VSTRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 72A D2PAK
More Detail: N-Channel 60V 72A (Tc) 150W (Tc) Surface Mount D2P...
DataSheet: IRFZ48VSTRLPBF datasheetIRFZ48VSTRLPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1985pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 12 mOhm @ 43A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFZ48VSTRLPBF family are N-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) from International Rectifier. These devices are used as switching and amplifying components in electronics. This article outlines their application field and working principle.

The IRFZ48VSTRLPBF family is part of the DirectFET series from International Rectifier. These power MOSFETs are well-suited for applications requiring fast switching, low-resistance and low-thermal impedance. Devices from this series are made from silicon using the latest trench MOSFET technology, which allows them to operate beyond 100 kHz while still maintaining low capacitances.

The IRFZ48VSTRLPBF family have a single gate connection compared to the dual-gate devices of other families. These single-gate devices offer low gate charge, fast switching speed and lower power losses compared to other MOSFETs. They are available in a variety of package types and power levels, from as low as 6A up to a maximum of 100A.

The working principle of MOSFET devices from the IRFZ48VSTRLPBF family is the same as other MOSFETs. By applying a voltage to the gate, a channel is created between the drain and source connections. This channel provides very low resistance compared to other components, allowing current to pass through easily. The amount of current allowed through the channel is proportional to the voltage applied to the gate.

The voltage at which the MOSFET conducts is called the threshold voltage. The IRFZ48VSTRLPBF family has a threshold voltage of 4V, allowing them to be used in low voltage circuits. They also have a maximum drain-source voltage of 20V, which gives them an advantage in high voltage applications.

The IRFZ48VSTRLPBF family of MOSFETs is well suited for low voltage, low power applications such as switched power supplies and high power switching for aircraft and automotive applications. They are also well-suited for motor control, robotics and signal processing, because of their low gate charge, fast switching speed and low thermal impedance.

In conclusion, the IRFZ48VSTRLPBF family are N-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) from International Rectifier. These devices have a single gate connection, low gate charge and fast switching speed compared to other MOSFETs. The IRFZ48VSTRLPBF family are applicable to a wide range of low voltage and high power switching applications, owing to their low threshold voltage and maximum drain-source voltage.

The specific data is subject to PDF, and the above content is for reference

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