IRFZ48ZLPBF Allicdata Electronics
Allicdata Part #:

IRFZ48ZLPBF-ND

Manufacturer Part#:

IRFZ48ZLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 61A TO-262
More Detail: N-Channel 55V 61A (Tc) 91W (Tc) Through Hole TO-26...
DataSheet: IRFZ48ZLPBF datasheetIRFZ48ZLPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 91W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFZ48ZLPBF is a field-effect transistor (FET) from International Rectifier. It is a single N-channel enhancment-mode MOSFET, meaning it utilizes an electrical field to control the electrical behavior of the transistor. The IRFZ48ZLPBF transistor itself is capable of handling up to 55 Amperes of current and supporting a peak voltage of just under 60 Volts. It has an on-resistance of just 245mΩ when fully turned on, and has minimal gate charge.

The IRFZ48ZLPBF has a wide range of applications, surprisingly well-suited to the demands of flash memory, LCD backlighting, audio loudspeakers, and other power management applications. In fact, no matter what the desired voltage or current requirements are, there is a good chance that this transistor can do the job. It is also used for controlling acoustic power, thermal heaters as well as automotive audio controllers.

The IRFZ48ZLPBF uses a single N-channel enhancement-mode MOSFET to create a high-current, low-resistance channel from the source to the drain when biased with a voltage to the gate. A high voltage applied to the gate will make the MOSFET turn on, allowing current to flow between the drain and the source. Conversely, no voltage applied to the gate will turn the device off, blocking the current path between the drain and the source.

The main advantage of using an IRFZ48ZLPBF is the low gate-source threshold voltage, which is usually around 3-2.6 V. This means that the transistor can be quickly switched on and off without having to apply a large voltage to the gate, which results in more efficient power regulation. Additionally, the IRFZ48ZLPBF has a low input capacitance, meaning that it can be switched on and off faster for higher frequency applications. It also has a higher thermal rating compared to other FETs, and is capable of dissipating up to 140 Watt of power, which makes it suitable for power management applications.

The IRFZ48ZLPBF is a highly versatile transistor, and can be used in a wide variety of applications. In fact, it is also a popular choice for hobbyists, who use it for building audio amplifiers, voltage regulators, and power supplies. With its ability to quickly switch currents up to 55 Amperes, this single device can help turn even the most complex of projects into reality.

The specific data is subject to PDF, and the above content is for reference

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