IRFZ24NSTRLPBF

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IRFZ24NSTRLPBF is a single N-Channel Trench Metal Oxide Semiconductor Field Effect Transistor manufactured by IRFZ. It is commonly used in various applications such as power switching, motor control, and especially used in dimming LED light applications. The transistor is housed in a surface mount ‘TO-252’ package.

For electrical specifications, the transistor has an R_ds(on) of 20 mΩ at 25 °C, a maximum drain-source voltage of 55 V, and a maximum drain current of 3.2 A. It also has a total gate charge of 19 nC, a maximum gate-source voltage of -12 V, and a maximum operating temperature of 175 °C.

IRFZ24NSTRLPBF is a low-power MOSFET. It has low ON resistance, which enables it to be driven with low-voltage signals. This makes it suitable for applications requiring low-noise operation. It also has built-in ESD and avalanche protection to ensure reliable performance.

The working principle of this MOSFET is quite simple. It is a voltage-controlled semiconductor device which is operated by an input voltage applied to its gate terminal. When a positive voltage is applied to the gate terminal, the MOSFET is turned ON. When a negative voltage is applied, the MOSFET is turned OFF.

In an application like dimming LED lights, the transistor is used as a current switch. The MOSFET is connected in series with the LED string and the voltage applied to the gate is used to control the amount of current flowing through the LED string. By varying the gate voltage, the LED brightness can be controlled accurately.

In conclusion, IRFZ24NSTRLPBF offers high performance, reliability and low power consumption. It is an ideal choice for low-noise switching applications, especially in dimming LED light applications.

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