IRFZ34NS

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 68W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	700pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	34nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	40 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	29A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IRFZ34NS, which stands for alphanumeric keycode, is a N-Channel MOSFET transistor produced by Infineon Technologies. It is a part of Infineon’s part of their low voltage HV (high voltage) MOSFET portfolio. The IRFZ34NS is designed specifically to offer a low voltage drop, making it a great choice for high-side switching applications in a variety of power management applications.The IRFZ34NS is a unique component due to its N-channel and low voltage drop. N-channel MOSFETs, or metal oxide semiconductor field-effect transistors, are three-terminal devices used for both switching and amplifying purposes. The IRFZ34NS has a very low voltage drop of 0.5V which means that it can handle a high amount of power without having to dissipate huge amounts of heat. This makes it an excellent choice for applications where lower voltage output is desired.The IRFZ34NS also offers current handling capability of up to 17A, meaning that it can handle a high amount of current as well. It is designed to operate in an ambient temperature range of -55°C to +150°C and can operate in an input voltage range of -55V to +100V.In terms of its primary application field, the IRFZ34NS is suited to a variety of power management applications. These include high-voltage DC-DC converters, point-of-load (POL) converters, general purpose switching, and many more. It is ideal for applications that require both high efficiency and low dissipation, such as voltage regulation and switching.The IRFZ34NS has several advantages over other types of MOSFET transistors. It has a low on-state resistance (RDS-on) allowing it to switch quickly and handle higher currents. It has a high input impedance and fast switching speed making it great for high speed, high-efficiency circuits. The low voltage drop also makes it great for energy conservation efforts, as it can draw less power for a given task.The IRFZ34NS, like any other MOSFET, works on the principle of voltage-controlled current. This means that, when a forward-biased voltage is applied to the gate of the MOSFET, it will allow current to flow between the drain and the source. The amount of current that flows is proportional to the voltage applied, which is why MOSFETs are known as voltage controlled current devices.In order to ensure optimal performance, the IRFZ34NS’s gate-source voltage should remain within a certain range. If the voltage applied is higher than the specified range, the IRFZ34NS will have an increased on-state resistance and the device’s surface mount package may overheat and/or damage. In order to prevent this from happening, the gate-source voltage should not exceed 0.5V.The IRFZ34NS is an excellent choice for a wide range of power management applications. Thanks to its low voltage drop, high current handling capabilities, fast switching speed and high input impedance, it is well-suited for applications requiring high efficiency and low dissipation. However, it is important to ensure that the gate-source voltage remains within the specified range to prevent any damage from occurring.

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