IRLR120

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRLR120 is an insulated-gate field-effect transistor (IGFET) that belongs to the HEXFETs family of power MOSFETs. As a high current, low voltage power MOSFET transistor, IRLR120 is mainly employed in applications such as Switch-Mode Power Supplies, DC-DC converters, high current switching, power converters and inverters.

The IRLR120 offers superior performance in various aspects. It is a 150V device with an RDS(on) (max.) of 0.0035Ω @ 10V, which makes it a suitable substrate for achieving high current power supply designs with low energy loss. Its low gate charge (Qg) (max.) of 7 nC at 10V helps reduce radiated noise from its associated components. IRLR120 also feature an Avalanche Rating of 40V, minimizing the overstress on the thyristor to reduce the size of the components.

The working principle of IRLR120 can be divided into two parts. Firstly, the gate-source threshold voltage (VGS,th) helps set the volume of current that passes through the device. This helps to regulate the gate-source voltage (VGS) and avoid current leakage. Secondly, the gate-charge (Qg) helps control the voltage across the drain-source (VDS), allowing for precise regulation of power.

When applying IRLR120, it should be noted that like other MOSFETs, IRLR120 transistors require adequate protection against static electricity, dv/dt, and temperature rise. Attention should be paid to the maximum values allowed on the drain-source voltage (VDS) of 150V, the gate-drain voltage (VGD) of 20V at 25°C, and the drain-source current ratings (Id) of 6A.

IRLR120 is a robust, low-power-dissipation, and low voltage power MOSFET transistor with superior characteristics for a wide range of application scenarios. It is designed to offer superior performance using smart design and providing low on-resistance, low switching loss and low noise characteristics. Its integrated HEXFETs technology also helps minimize RDS(on) and enables high current switching. Furthermore, IRLR120 can achieve high power density designs and improve system efficiency thanks to its low gate charge, lowthreshold voltage and low gate-switching losses, making it an ideal choice for high current, low voltage power supply applications.

The specific data is subject to PDF, and the above content is for reference