IRLR024PBF Allicdata Electronics
Allicdata Part #:

IRLR024PBF-ND

Manufacturer Part#:

IRLR024PBF

Price: $ 1.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 14A DPAK
More Detail: N-Channel 60V 14A (Tc) 42W (Tc) Surface Mount D-Pa...
DataSheet: IRLR024PBF datasheetIRLR024PBF Datasheet/PDF
Quantity: 1590
1 +: $ 1.21590
10 +: $ 1.09935
100 +: $ 0.88351
500 +: $ 0.68719
1000 +: $ 0.56939
Stock 1590Can Ship Immediately
$ 1.34
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRLR024PBF is a field effect transistor (FET) from a family of MOSFETs (metal oxide semiconductor field effect transistors) that are specifically designed for increased power efficiency, fast switching speeds and high breakdown voltages. It is a single FET and is used for low-power and high-frequency applications such as power conversion, motor control and switching power supplies.

The IRLR024PBF has a wide variety of features including low drain-source on-state resistance, low gate charge and low capacitance. Its low gate charge makes it suitable for use in high speed switching applications and its low drain-source on-state resistance helps to reduce power losses during switching. It also features a high input impedance and a breakdown voltage of 400V, making it suitable for use in high voltage environments.

The working principle of the IRLR024PBF can be explained with reference to the construction and operation of MOSFETs in general. MOSFETs are composed of a gate, a source, and a drain. The gate is made of an insulation material, such as silicon dioxide, which separates the source and the drain. When the gate is charged with a positive or negative voltage, the channel between the source and the drain is opened or closed, allowing current to flow between the two.

The IRLR024PBF is typically used for small-signal circuitry, such as logic gates and linear circuits, but it is also used in a variety of applications such as motor control, power supplies, and power conversion. In power conversion, the device is typically switched at high frequency, and its low gate charge allows it to turn on and off faster than other MOSFETs.

In motor control applications, the IRLR024PBF can be used as a driver for a brushless DC motor or, in some cases, as a switching element for an AC motor, depending on the type of motor. The low drain-source on-state resistance of IRLR024PBF reduces power losses during switching and, in some applications, helps improve motor efficiency.

The IRLR024PBF is also used in various power supplies to provide regulated voltage or current, as well as in high voltage applications such as flyback converters and lamp ballasts. The high input impedance and breakdown voltage of the device make it suitable for use in such applications.

In summary, the IRLR024PBF is a versatile and highly efficient FET that can be used in applications requiring fast switching and high breakdown voltages. Its low drain-source on-state resistance, low gate charge and high input impedance make it suitable for high-speed switching, motor control and power conversion applications, as well as for power supplies and high-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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