| Allicdata Part #: | IRLR014NTRL-ND |
| Manufacturer Part#: |
IRLR014NTRL |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 55V 10A DPAK |
| More Detail: | N-Channel 55V 10A (Tc) 28W (Tc) Surface Mount D-Pa... |
| DataSheet: | IRLR014NTRL Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 28W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 265pF @ 25V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.9nC @ 5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 140 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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IRLR014NTRL is a 4-A single-pole, single-throw (SPST) N-channel enhancement-mode power MOSFET (metal-oxide semiconductor field-effect transistor). It is used mainly in the switching applications such as switch-mode power supplies, battery-operated devices, automotive, and various low-noise noise-sensitive applications. The device features low on-resistance, fast switching speeds, and small package outlines.
The IRLR014NTRL device is a current-driven power MOSFET. The device does not require any gate bias or charge to switch or turn on its load. Instead, the device is designed to operate with just current flowing through the drain and source. Every time there is a current from the drain to the source, the gate voltage of the device decreases, thus allowing the device to switch on. The gate-source voltage of the device is approximately 1V when the drain current is greater than 2 A.
The IRLR014NTRL device is a very low on-resistance device, with an on-resistance value of 0.006 ohm. The low on-resistance makes the device ideal for switching applications because it reduces the amount of power losses due to the resistance of the device. As a result, the device can handle very high current loads, up to 4 A, without any excessive power losses.
The switching speed of the IRLR014NTRL device is also very impressive. The device is capable of switching speeds of up to 10ns (10 nanoseconds). This allows the device to be used in various high-speed switching applications and also helps to reduce the overall power losses due to the fast switching times. The device also offers higher levels of EMC (Electro-Magnetic Compatibility).
The package outlines of the IRLS014NTRL device are also very small. It comes in a standard SO14 package size which means that the device can be easily integrated into many other applications. This makes the device ideal for the miniaturization of electronic applications, or for the portable device markets. It is also useful for applications where a high level of heat dissipation is not necessary.
In conclusion, the IRLR014NTRL is a versatile and reliable power MOSFET that is suitable for various applications, including switch-mode power supplies, battery-operated devices, automotive, and various low-noise noise-sensitive applications. It features low on-resistance, fast switching speeds, and small package outlines, making it ideal for the miniaturization of electronic applications, or for the portable device markets. With its low on-resistance, high level of EMC (Electro-Magnetic Compatibility), and fast switching speeds, the IRLR014NTRL device is a very good choice for the applications where high-speed, low power losses, and reliable performance are of the essence.
The specific data is subject to PDF, and the above content is for reference
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IRLR014NTRL Datasheet/PDF