Allicdata Part #: | IRLR3714TRR-ND |
Manufacturer Part#: |
IRLR3714TRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 36A DPAK |
More Detail: | N-Channel 20V 36A (Tc) 47W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR3714TRR Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.7nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 47W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRLR3714TRP is a lateral double-diffused mosfet (LDMOS). This type of MOSFETS is used in wide range of diverse applications, from automotive to consumer electronics, from high voltage to low voltage, from high power to low power. The IRLR3714TRP is a low-voltage, low-power, low on-resistance type of N-channel MOSFET. It is specifically designed for a digital power or load switch applications.
The IRLR3714TRP is constructed using a low-resistance, low-threshold, lightly doped drain (LDD) process. It utilizes LDD to minimize on-resistance, while keeping the threshold voltage low. The device has a very low on resistance, and is suitable for use as a load switch. With the low on-resistance, the device is also capable of supplying larger amounts of current with minimal power dissipation.
In general, MOSFETs work by using an input voltage or current to control the current flowing between the source and the drain. The current flow is controlled by an inversion layer (or channel) in the form of a semiconductor. A voltage applied to the gate changes the width of the inversion layer, thus controlling the amount of current which flows. The IRLR3714TRP is intended to be used as an load switch, it is very reliable, and can be used with different power ranges.
The device has a threshold voltage of 3.5 V, and can be used in a wide range of temperatures (-55 to +25 to +85 C). It has a maximum channel temperature of 150 C, and a maximum drain-source resistance at 1.5 ohms. It has a total gate charge of 45 nC and a gate-source voltage of 20 V. It is also capable of operating at a wide range of frequencies from 2 kHz to 20 MHz.
The IRLR3714TRP is a versatile low-voltage, low-power, low on-resistance MOSFET that is suitable for digital power or load switch applications. Its low on-resistance, low threshold voltage, and wide operating temperature range make it an ideal solution for a wide range of applications, from consumer electronics to automotive, from low voltage to high voltage, and from low power to high power. Its wide operating temperature range, low threshold voltage, and low on-resistance make it ideal for digital power and load switch applications, as well as a variety of other applications.
The specific data is subject to PDF, and the above content is for reference
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