Allicdata Part #: | IRLR2703PBF-ND |
Manufacturer Part#: |
IRLR2703PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 23A DPAK |
More Detail: | N-Channel 30V 23A (Tc) 45W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR2703PBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 45W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRLR2703PBF is a high-power N-channel enhancement mode MOSFET which is ideal for use in a variety of applications, from consumer electronics to industrial automation. It is capable of delivering up to 45A, making it an ideal choice for high-current applications. In addition, it has an ultra-low on-resistance of only 5.4 mΩ, which makes it extremely efficient. This makes it perfect for switching and power-control applications.
When it comes to industrial automation applications, the IRLR2703PBF can be used to control the flow of power and load. Its high-current rating makes it suitable for controlling and regulating power in a variety of industrial motor and actuator applications. In addition, it can be used in a wide range of applications in the consumer electronics industry, including digital control systems, LED drivers, motor control, and audio amplifiers.
In terms of its working principle, the IRLR2703PBF is an electrical switch, meaning it can act as either a conductor or an insulator depending on the applied voltage. A single gate-source voltage (Vgs) is required to operate the MOSFET. When the gate-source voltage is increased, the resistance of the MOSFET decreases and current is allowed to flow from the source to the drain. Conversely, when the gate-source voltage is decreased, the resistance of the MOSFET increases and current is blocked from flowing from source to drain. Therefore, by varying the gate-source voltage, the MOSFET can be used to control the flow of electric current.
One of the advantages of an IRLR2703PBF MOSFET is its ability to handle large amounts of power with very low power loss. This ensures that the high-current applications run efficiently with minimal energy consumption. In addition, this MOSFET has a low gate capacitance, which makes it suitable for high-speed switching applications. Furthermore, the relatively low gate-source voltage requirement allows the IRLR2703PBF MOSFET to be used without the need for a heat sink or other cooling devices.
The IRLR2703PBF MOSFET is well suited for a variety of industrial and consumer electronics applications. The device can be used to control and regulate power in a wide range of industrial motor and actuator applications. In addition, it can be used for digital control systems, LED drivers, motor control, and audio amplifiers. Moreover, its low power loss, low gate capacitance, and low gate-source voltage requirement makes it perfect for high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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