IRLR3715TR Allicdata Electronics
Allicdata Part #:

IRLR3715TR-ND

Manufacturer Part#:

IRLR3715TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 54A DPAK
More Detail: N-Channel 20V 54A (Tc) 3.8W (Ta), 71W (Tc) Surface...
DataSheet: IRLR3715TR datasheetIRLR3715TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRLR3715TR is a type of insulated-gate bipolar transistor, or IGBT. It belongs to a family of transistors called field-effect transistors, or FETs. It is a single-package FET, meaning that it consists of only one component instead of multiple components as in a dual- or triple-package FET. The IRLR3715TR is designed for use in a wide range of applications, and its general construction and working principle remains the same across such applications.

Applications of IRLR3715TR

The IRLR3715TR is a popular choice for use in power electronics devices such as DC-DC converters, inverters and motor controllers. These devices require high-speed switching and high breakdown voltages, both of which the IRLR3715TR is well-suited to provide. It can also be used to replace recent silicon super-junction MOSFETs in certain applications.

In addition to power electronics applications, the IRLR3715TR can also be used in other areas where field-effect transistors are needed. These include power switches, motor start circuits and other such circuitry that requires fast switching or high current carrying capacity. The IRLR3715TR is popular because of its low on-resistance and high breakdown voltage, making it an ideal choice for these applications.

Working Principle of IRLR3715TR

The IRLR3715TR consists of two transistors, an N-channel FET and a P-channel FET, connected in a "T" configuration. Each of these transistors has its own gate, drain and source. Gate voltage applied to each FET causes a current to flow between the drain and the source. The amount of current that flows between the two transistors is determined by the resistance between them.

The IRLR3715TR works on the principle of two N-channel FETs "sandwiched" between two P-channel devices. The two N-channel FETs are connected in parallel to each other and the two P-channel FETs are connected in series. Applying a voltage to the source causes current to flow between the drain and the source. This current is controlled by the gate voltages applied to each FET.

The IRLR3715TR is typically used in applications that require fast switching and high breakdown voltages. It is also used for providing isolation between the voltage supply and the load. The IRLR3715TR is also used in power switches, motor drives and other motor control circuits, where it is relied upon to provide high efficiency, reliable operation and low on-resistance.

Conclusion

The IRLR3715TR is a single-package FET designed for use in a variety of power electronics applications, such as DC-DC converters, inverters and motor controllers. Its general construction and working principle remain the same across such applications, with two N-channel FETs "sandwiched" between two P-channel devices, and gate voltages applied to each FET controlling the amount of current that flows between the drain and the source. The IRLR3715TR is known for its high breakdown voltage and low on-resistance, making it an ideal choice for power electronics and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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