Allicdata Part #: | IRLR3714-ND |
Manufacturer Part#: |
IRLR3714 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 36A DPAK |
More Detail: | N-Channel 20V 36A (Tc) 47W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR3714 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.7nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 47W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRF3714 power metal-oxide-semiconductor field-effect transistor (MOSFET) is a device used frequently in applications requiring low on-resistance and high power efficiency. It offers many advantages versus standard MOSFET transistors, most notably its fast switching speed and its excellent power dissipation capacity. This makes the IRF3714 a popular choice for applications such as switch mode power conversion, radio frequency (RF) power amplifiers, and high-side switching.
The IRF3714 features a low on-resistance of 19 m_, excellent temperature and avalanche characteristics, as well as a very low gate charge of 14.5 nC. It is rated for voltage ranges of 30 V to 150 V and current levels of 0.17 A to 48 A. The main parameters of the device are gate to source voltage, drain to source voltage, drain current and gate to source resistance.
The IRF3714 is composed of a silicon substrate with an insulator gate over it. When a voltage is applied to the gate, a conductive channel forms from the potential of the source to the potential of the drain, allowing current to flow between the source and the drain. This is the basic concept behind MOSFET operation. The amount of current that can pass through the device is determined by the gate voltage, allowing the device to be used as an electronic switch.
The IRF3714 is an excellent choice for applications that require low on-resistance and high power efficiency. Its fast switching speed and excellent power dissipation capacity are two examples of why this device is so desirable. The main advantage of using an IRF3714 is its ability to handle large currents without significant heating, allowing for improved power efficiency. Additionally, the device is designed to operate in the most extreme temperature ranges, from -55°C up to +175°C.
In addition to its excellent current carrying capacity, the IRF3714 also features a number of safety features. It has a significantly increased lag time before it can be triggered, which prevents rapid power transients from occurring and damaging components in the system. Additionally, the device features a number of overtemperature and overvoltage protection features, ensuring that when a failure does occur, any related damage is kept to a minimum.
The IRF3714 can be used in a variety of situations, ranging from switch mode power conversion to high-side switching. It has become a popular choice in applications that require a device that can operate reliably in extreme environments and can handle large amounts of power without excessive heating or dangerous transients. Its excellent combination of low on-resistance and high power dissipation coupled with its impressive safety features makes it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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