IRLR3714ZTRRPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRLR3714ZTRRPBF is a model of a power MOSFET (metal oxide semiconductor field effect transistor) from International Rectifier. It is a single N-channel enhancement mode MOSFET chip that works as a switch and is used in many different applications due to its versatile structure. It is a voltage controlled device, meaning the voltage difference between the gate and the source dictates how much current can flow through the device.

The IRLR3714ZTRRPBF has an exceptionally low on-state resistance and is capable of carrying heavy currents due to its wide range of drain-source voltage range of 60 to 500 volts. It is an ideal choice for applications where power must be transmit quickly and efficiently, such as motor control, lighting control, and switchers. In addition, as it is an enhancement mode device, it can also be used in low-voltage and low-current applications where a low on-state resistance is critical, such as clock generators and power supplies.

The working principle behind the IRLR3714ZTRRPBF is relatively simple. It consists of a channel of N-type silicon material, sandwiched between the source and drain terminals. When the gate is held at a potential higher than the potential of the source, a current can flow through the device and the switch is considered ‘on’. Conversely, when the gate is held at a potential lower than the potential of the source, no current can flow, and the switch is considered ‘off’.

In addition, the IRLR3714ZTRRPBF is known for its ability to provide high efficiency due to its low live-on voltage and minimal gate capacitance. It also does not require any external source for developing the voltage field for creating the conducting path, making it suitable for use in switched mode power supplies.

Overall, the IRLR3714ZTRRPBF is a great choice for applications that require quick power transmission, high efficiency, and flexibility. It is an enhancement mode MOSFET, so it can be used in low-voltage and low-current applications, and it\'s wide drain-source voltage range and low on-state resistance allow it to handle heavy current loads. It also does not require any external source for developing a voltage field, making it suitable for use in switched mode power supplies.

The specific data is subject to PDF, and the above content is for reference