IRLR8113TRLPBF

Rds On (Max) @ Id, Vgs:	6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	32nC @ 4.5V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2920pF @ 15V
FET Feature:	--
Power Dissipation (Max):	89W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Series:	HEXFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	94A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V

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Introduction

IRLR8113TRLPBF is an advanced, fast acting, low-loss Power MOSFET (Insulated Gate Bipolar Transistor, or IGBT) transistor set. This device is suitable for a wide range of applications and is compatible with most commonly used surface mount packages.In this article, I will discuss the application fields of IRLR8113TRLPBF and discuss its working principle. I will also provide a brief overview of the various uses of MOSFETs for design and manufacturing.

Application Fields of IRLR8113TRLPBF

IRLR8113TRLPBF is a versatile IGBT, which is suitable for a multitude of applications including:

• Switching and rectifying power factor correction (PFC) circuits;
• Light dimming circuits;
• Inverter circuits;
• DC motor drives;
• Relay switches;
• Controlling electrical motors;
• Telecommunication devices.

The transistor offers high switching speeds and low input power losses, thereby increasing the overall efficiency of the circuit. Moreover, it is also suitable for use in high-temperature and high-frequency applications such as mobile devices and robotics.

Working Principle of IRLR8113TRLPBF

The IRLR8113TRLPBF is an insulated gate bipolar transistor (IGBT) - a type of MOSFET. A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of transistor which uses an insulated gate to control the flow of current between source and drain.The working of a MOSFET can be explained using a small electric circuit. The various components of a basic MOSFET circuit are the source, drain, gate, and the Insulated Gate Bipolar Transistor (IGBT).A current is applied to the source and drain (S and D) terminals. The gate terminal is then used to control the flow of current between the S and D terminals by controlling the voltage of the gate terminal.When a positive voltage is applied to the gate, the transistor will be “on”, allowing a large current to flow between the S and D terminals. When the voltage is reversed, the transistor will be “off”, blocking the current and preventing it from flowing.

Conclusion

IRLR8113TRLPBF is an advanced power MOSFET (Insulated Gate Bipolar Transistor, or IGBT) set designed for use in a wide range of applications. The transistor is ideal for use in high-temperature and high-frequency applications such as mobile devices and robotics. It provides high switching speeds and low input power losses.The working principle of the IRLR8113TRLPBF can be explained using a basic MOSFET circuit. In this circuit, a current is applied to the source and drain terminals and the gate terminal is used to control the flow of current by controlling the voltage of the gate terminal. When the gate voltage is positive, the current is allowed to flow.

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