
Allicdata Part #: | IRLR120NPBF-ND |
Manufacturer Part#: |
IRLR120NPBF |
Price: | $ 0.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 10A DPAK |
More Detail: | N-Channel 100V 10A (Tc) 48W (Tc) Surface Mount D-P... |
DataSheet: | ![]() |
Quantity: | 2781 |
1 +: | $ 0.75000 |
10 +: | $ 0.72750 |
100 +: | $ 0.71250 |
1000 +: | $ 0.69750 |
10000 +: | $ 0.67500 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 185 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IRF120NPBF is a single part in Infineon\'s range of power MOSFETs. It is a N-channel enhancement mode MOSFET, operating in a voltage range of 5 to 100 volts and is suitable for a wide range of applications in the automotive and aerospace industries. This MOSFET has a high input impedance, excellent switching performance and fast turn-on and turn-off times. It also has a low gate capacitance, making it highly suitable for high frequency applications.
This MOSFET has been designed for use in applications where exceptional speed and power handling is needed. It can be used in switching applications, power amplifiers, power converters and low-side switching circuits. The low gate threshold voltage of 4 volts ensures that the MOSFET operates promptly and with precision. Furthermore, the device is designed to withstand a high source-drain maximum voltage of 100 volts.
The operating principle of this MOSFET is similar to that of any other MOSFET. It is a voltage controlled switch, and the application of a voltage at the gate terminal will turn on the device. When the gate voltage reaches the threshold voltage, usually 4 volts, the device is turned on and current starts flowing from the source to the drain. The source voltage is held low when the device is on, and the drain-source voltage is held high. When the gate voltage is decreased below the threshold voltage of the device, it is turned off and no current will flow.
The IRF120NPBF is an ideal choice for many applications due to its high speed, current and power ratings, small size, and high frequency performance. Additionally, the device is RoHS compliant, making it suitable for use in a variety of electronics applications, including computers, networking, automotive and home entertainment. The device is available in both through-hole and surface mount packages, making it highly applicable in both commercial and industrial applications.
The IRF120NPBF is a popular and widely used device for its speed, power, and size and is an important component in many different applications. Its fast switching speeds and low threshold voltage make it ideal for high frequency and switching applications, while its power and current ratings and small size make it suitable for many automotive and aerospace applications.
The specific data is subject to PDF, and the above content is for reference
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IRLR3715ZTRLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 49A DPAKN... |
IRLR3714 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 36A DPAKN... |
IRLR8113TRLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 94A DPAKN... |
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IRLR2705TRLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 28A DPAKN... |
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IRLR2905ZTRPBF | Infineon Tec... | -- | 15000 | MOSFET N-CH 55V 42A DPAKN... |
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