IRLR120NPBF Allicdata Electronics
Allicdata Part #:

IRLR120NPBF-ND

Manufacturer Part#:

IRLR120NPBF

Price: $ 0.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 10A DPAK
More Detail: N-Channel 100V 10A (Tc) 48W (Tc) Surface Mount D-P...
DataSheet: IRLR120NPBF datasheetIRLR120NPBF Datasheet/PDF
Quantity: 2781
1 +: $ 0.75000
10 +: $ 0.72750
100 +: $ 0.71250
1000 +: $ 0.69750
10000 +: $ 0.67500
Stock 2781Can Ship Immediately
$ 0.75
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 185 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IRF120NPBF is a single part in Infineon\'s range of power MOSFETs. It is a N-channel enhancement mode MOSFET, operating in a voltage range of 5 to 100 volts and is suitable for a wide range of applications in the automotive and aerospace industries. This MOSFET has a high input impedance, excellent switching performance and fast turn-on and turn-off times. It also has a low gate capacitance, making it highly suitable for high frequency applications.

This MOSFET has been designed for use in applications where exceptional speed and power handling is needed. It can be used in switching applications, power amplifiers, power converters and low-side switching circuits. The low gate threshold voltage of 4 volts ensures that the MOSFET operates promptly and with precision. Furthermore, the device is designed to withstand a high source-drain maximum voltage of 100 volts.

The operating principle of this MOSFET is similar to that of any other MOSFET. It is a voltage controlled switch, and the application of a voltage at the gate terminal will turn on the device. When the gate voltage reaches the threshold voltage, usually 4 volts, the device is turned on and current starts flowing from the source to the drain. The source voltage is held low when the device is on, and the drain-source voltage is held high. When the gate voltage is decreased below the threshold voltage of the device, it is turned off and no current will flow.

The IRF120NPBF is an ideal choice for many applications due to its high speed, current and power ratings, small size, and high frequency performance. Additionally, the device is RoHS compliant, making it suitable for use in a variety of electronics applications, including computers, networking, automotive and home entertainment. The device is available in both through-hole and surface mount packages, making it highly applicable in both commercial and industrial applications.

The IRF120NPBF is a popular and widely used device for its speed, power, and size and is an important component in many different applications. Its fast switching speeds and low threshold voltage make it ideal for high frequency and switching applications, while its power and current ratings and small size make it suitable for many automotive and aerospace applications.

The specific data is subject to PDF, and the above content is for reference

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