Allicdata Part #: | IRLR130ATM-ND |
Manufacturer Part#: |
IRLR130ATM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 13A DPAK |
More Detail: | N-Channel 100V 13A (Tc) 2.5W (Ta), 46W (Tc) Surfac... |
DataSheet: | IRLR130ATM Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 6.5A, 5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 755pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 46W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IRLR130ATM application field and working principle are important to understand as they can provide many benefits to those in the field of power management. This type of transistors is widely used in various applications such as power amplifiers, motor control, and other industrial applications. It is also used in various electrical systems to control voltage and current.
The IRLR130ATM is a Vertical Channel N-MOSFET transistor. This type of transistor is able to produce high power efficiency in a single package. It offers a low on-resistance, as well as a high-switching speed. This allows for efficient and effective control in a variety of applications.
The design of the IRLR130ATM is based on a vertical structure. This vertical structure allows for reduced on-resistance compared to horizontal structures. This is done by using a vertical configuration of the drain and source. The vertical structure also helps to reduce the stray capacitance, allowing for higher switching speeds.
The IRLR130ATM is a single package FET transistor. The single package is ideal for use in applications where space and cost are of concern. It is designed to work with low source voltages, with a drain-source breakdown voltage of 40 V. This allows for use in applications which require low-power and low-voltage operations.
The working principle of the IRLR130ATM is based on the open drain configuration. In this configuration, a constant current source is used to pass current through the source and the drain of the device. The current passing through the device will then activate the p-type material and induce a change in the resistance of the channel. This change of resistance will result in a change in the voltage across the device and the current across the drain-source.
There are many uses and benefits of using the IRLR130ATM. It is an ideal device for use in power management applications as it provides efficient and cost-effective control of power and current. It is also suitable for use in electronic applications such as audio amplifiers and fuel injection system. Furthermore, the single package FET transistor provides the advantage of cost-effectiveness and compactness.
Overall, the IRLR130ATM is a single package FET transistor that can be used in many applications. Thanks to its vertical structure and low on-resistance, it is able to provide high power, as well as a high switching speed. This makes it suitable for use in various power management and audio applications. Furthermore, its single package design allows for cost-effectiveness and smaller size.
The specific data is subject to PDF, and the above content is for reference
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