| Allicdata Part #: | IRLR230ATM-ND |
| Manufacturer Part#: |
IRLR230ATM |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 7.5A DPAK |
| More Detail: | N-Channel 200V 7.5A (Tc) 2.5W (Ta), 48W (Tc) Surfa... |
| DataSheet: |  IRLR230ATM Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 48W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 755pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 400 mOhm @ 3.75A, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Current - Continuous Drain (Id) @ 25°C: | 7.5A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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IRLR230ATM is a n-channel MOSFET used mainly in low-duty switching and loading applications. It is a high-performance device with a single-ended gate structure and a low input capacitance for efficient switching applications. It can operate on voltages up to 30V and has sixth order dynamic breakpoint characteristics with an ultra-low RDS(on) for improved system efficiency and power density.The IRLR230ATM is an enhancement-mode n-channel MOSFET that is suitable for various power management applications such as DC-DC converters and motor control. It features low gate charge and low on-state resistance (RDS(on)) which makes it suitable for use in high power applications. It also features superior ESD protection and high temperature operation up to 175°C.Since the IRLR230ATM is a MOSFET, it works on electrical principles which allow it to be used in a variety of applications. It consists of a gate, drain and source. When a voltage is applied to the gate, it modulates the electrical field present between the drain and the source and allows current to flow in either direction. This modulation of the electrical field is known as the MOSFET switching action.The main advantage of using a MOSFET is that it can switch very quickly with low power losses, making it ideal for use in high power applications. The IRLR230ATM is especially suitable for implementing high frequency switching, as it has a low gate charge. This gate charge is typically less than 10 nC, which allows for low switching times.In addition, the IRLR230ATM provides improved ESD protection over other MOSFETs with its integrated guard ring structure. This guard ring helps reduce the risk of ESD-induced latch-up and related failures, making it one of the most reliable MOSFETs available today.Overall, the IRLR230ATM is a suitable choice for a wide range of applications requiring efficient power management and high-speed switching. Its low gate charge, low on-state resistance, and superior ESD protection make it an ideal choice for power management and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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