
Allicdata Part #: | IRLR2905CPBF-ND |
Manufacturer Part#: |
IRLR2905CPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 36A DPAK |
More Detail: | N-Channel 55V 36A (Ta) Surface Mount D-Pak |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Ta) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRLR2905CPBF is a P-Channel power Metal-Oxide-Semiconductor Field-Effect transistor (MOSFET). As a voltage-controlled device, it is suitable for various applications in power switching and/or amplifying components. It has a low on-state resistance and is capable of both linear and pulsed loading. This transistor is available in a small TO-263 package, which allows it to be used in a wide range of applications, such as: switch mode power supplies, converters, general-purpose switching applications and high voltage motor drives.
The IRLR2905CPBF is commonly used in power switching and amplifying circuits. It operates as a voltage-controlled switch and is used to supply current from a voltage source to an output component. The transistor is comprised of two parts: the drain and the source. When a voltage is applied to the gate, an electric field is created that attracts holes from the source and injects them into the channel. This results in a current flow from the drain to the source, and the transistor is said to be in the on state.
When the voltage to the gate is removed, the channel holes are not attracted and the current from the drain to the source is cut off. This causes the transistor to enter into the off state. The on-state resistance is determined by the size and shape of the channel, as well as the voltage applied to the gate. The IRLR2905CPBF has a very low on-state resistance, making it suitable for various low power applications.
In addition to its low on-state resistance, the IRLR2905CPBF offers a variety of other features. It has an operational temperature range of -55°C to +150°C, making it suitable for a wide range of applications. The maximum drain-source voltage is also 250V, which is also suitable for many applications. Furthermore, the IRLR2905CPBF is capable of both linear and pulsed loading, making it a versatile component.
Thanks to its size, low on-state resistance and versatile loading capabilities, the IRLR2905CPBF can be used in a variety of applications, including: switch mode power supplies, converters, general-purpose switching applications and high voltage motor drives. In conclusion, the IRLR2905CPBF is a small yet powerful P-Channel MOSFET, capable of providing a low on-state resistance and versatile loading capabilities.
The specific data is subject to PDF, and the above content is for reference
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