| Allicdata Part #: | IRLR2905TRLPBFTR-ND |
| Manufacturer Part#: |
IRLR2905TRLPBF |
| Price: | $ 0.39 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 55V 42A DPAK |
| More Detail: | N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-P... |
| DataSheet: | IRLR2905TRLPBF Datasheet/PDF |
| Quantity: | 3000 |
| 1 +: | $ 0.39000 |
| 10 +: | $ 0.37830 |
| 100 +: | $ 0.37050 |
| 1000 +: | $ 0.36270 |
| 10000 +: | $ 0.35100 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 27 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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IRLR2905TRLPBF is an N-Channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) that has a number of uses in various applications. It is typically used for switching, level shifting, and power management in consumer electronics and industrial applications. The IRLR2905TRLPBF has a number of features which make it attractive in these applications, such as a wide operating range, low gate threshold voltage, and high power dissipation.
In order to understand how an N-Channel MOSFET works, it is important to understand how current flows through an N-Channel MOSFET. N-Channel MOSFETs are constructed from a three terminal junction formed by the source, drain, and gate. The current flow through an N-Channel MOSFET is regulated by the gate voltage. When the gate voltage is high, current can flow freely between the source and drain. However, when the gate voltage is low, current cannot flow across the junction.
The IRLR2905TRLPBF has a low gate threshold voltage which makes it ideal for applications where the power needs to be controlled carefully. This is because lowering the gate voltage results in less power being dissipated by the transistor. Additionally, the IRLR2905TRLPBF has a wide operating range, allowing it to be used in both high and low frequency applications.
One of the most common applications for the IRLR2905TRLPBF is in switching circuits. Because the N-Channel MOSFET’s current flow is controlled by the gate voltage, it can be used to switch a load on and off by applying the appropriate voltage. This makes it useful for controlling power in consumer electronics devices such as TVs, computers, and other electronics devices. Additionally, the IRLR2905TRLPBF’s wide operating range means it can be used for high frequency switching, such as in RF circuits.
Another common application for the IRLR2905TRLPBF is in level shifting. Level shifting is the process of changing the voltage level of an electrical signal without changing its shape or other characteristics. The IRLR2905TRLPBF can be used to control the level of the signal by varying the gate voltage. This makes it ideal for circuitry where a precise level of voltage needs to be maintained, such as in analog circuits.
Finally, the IRLR2905TRLPBF can be used for power management. N-Channel MOSFETs are typically used in power management circuits because of their ability to rapidly switch high current loads on and off. This makes them ideal for providing a clean and reliable power source for devices that require a high current.
The IRLR2905TRLPBF is an N-Channel MOSFET which is ideal for a variety of applications. It can be used for switching, level shifting, and power management, making it a versatile and reliable component for many different circuits. Additionally, its low gate threshold voltage, wide operating range, and high power dissipation make it a versatile and attractive choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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| IRLR3715ZTRLPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 49A DPAKN... |
| IRLR3714 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 36A DPAKN... |
| IRLR8113TRLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 94A DPAKN... |
| IRLR3105TRPBF | Infineon Tec... | -- | 2000 | MOSFET N-CH 55V 25A DPAKN... |
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IRLR2905TRLPBF Datasheet/PDF